Results 301 to 310 of about 280,313 (347)

Impact of Tetrakis(dimethylamido)tin(IV) Degradation on Atomic Layer Deposition of Tin Oxide Films and Perovskite Solar Cells. [PDF]

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Qiu S, Amaro A, Fabulyak D, Appleby-Millette J, Conover C, Zhang D, Yeddu V, Cheong IT, Paci I, Saidaminov MI.   +9 more
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Atomic Layer Deposition of Zirconia on Titanium Implants Improves Osseointegration in Rabbit Bones. [PDF]

Int J Nanomedicine
Kim HJ, Lee SK, Kim HS, Kim WJ, Ryu JH, Ji MK, Lim HP.   +6 more
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Single administration of mosaic-8b RBD-nanoparticle vaccine prepared with atomic layer deposition technology elicits broadly neutralizing anti-sarbecovirus responses

Cohen AA, Keeffe JR, Rorick AV, Rho S, Fils AP, Manasyan L, Gao H, Gnanapragasam PN, Funke HH, Randolph TW, Garcea RL, Bjorkman PJ.   +11 more
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Atomic Layer Deposition [PDF]

, 2015
Atomic layer deposition (ALD), also referred to historically as atomic layer epitaxy, is a vapor-phase deposition technique for preparing ultra-thin films with precise growth control. ALD is currently rapidly evolving, mostly driven by the continuous trend in the miniaturization of electronic devices. In addition, many other innovative technologies are
Knoops, H.C.M., Potts, S.E., Bol, A.A., Kessels, W.M.M.   +3 more
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Atomic layer deposition [PDF]

Semiconductor Science and Technology, 2012
The growth method of atomic layer deposition (ALD) was introduced in Finland by Suntola under the name of atomic layer epitaxy (ALE). The method was originally used for deposition of thin films of sulphides (ZnS, CaS, SrS) activated with manganese or rare-earth ions.
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Atomic layer deposition

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 2002
The current status of ALD technology will be reviewed. In addition, engineered nanolaminate or alloy films of both dielectric and metal materials will be demonstrated and their applications discussed.
B. Clark-Phelps, O. Sneh, Shi-Qing Wang, E. Lee, T. Seidel, A. Londergan   +5 more
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Atomic Layer Deposition

2011
A method of depositing a material on a substrate using an atomic layer deposition process, wherein the deposition process comprises a first deposition step, a second deposition step subsequent to the first deposition step, and a delay of at least one minute between the first deposition step and the second deposition step. Each deposition step comprises
Charles Anthony Neild Collis, Nathan Charles Brown, Sai G. Shiva-Reddy, Youngjin Choi, Gehan A. J. Amaratunga   +4 more
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Atomic-layer deposition of Lu2O3

Applied Physics Letters, 2004
Rare earth oxides could represent a valuable alternative to SiO2 in complementary metal–oxide–semiconductor devices. Lu2O3 is proposed because of its predicted thermodynamical stability on silicon and large conduction band offset. We report on the growth by atomic-layer deposition of lutetium oxide films using the dimeric {[C5H4(SiMe3)]2LuCl}2 complex,
Scarel, G, BONERA, EMILIANO, Wiemer, C, Tallarida, G, Spiga, S, FANCIULLI, MARCO, Fedushkin, IL, Schumann, H, Lebedinskii, Y, Zenkevich, A.   +9 more
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Atomic Layer Deposition of Osmium

Chemistry of Materials, 2011
Growth of osmium thin films and nanoparticles by atomic layer deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon,
Markku Leskelä, Esa Puukilainen, Timo Sajavaara, Mikko Ritala, Jani Hämäläinen   +4 more
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