Results 311 to 320 of about 280,313 (347)

Atomic layer deposition of transition metals

Nature Materials, 2003
Atomic layer deposition (ALD) is a process for depositing highly uniform and conformal thin films by alternating exposures of a surface to vapours of two chemical reactants. ALD processes have been successfully demonstrated for many metal compounds, but for only very few pure metals.
Roy G. Gordon, Booyong S. Lim, Antti Rahtu   +2 more
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Complex Materials by Atomic Layer Deposition

Advanced Materials, 2015
Complex materials are defined as nanostructured materials with combinations of structure and/or composition that lead to performance surpassing the sum of their individual components. There are many methods that can create complex materials; however, atomic layer deposition (ALD) is uniquely suited to control composition and structural parameters at ...
Adam M. Schwartzberg, Deirdre L. Olynick
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Atomic Layer Deposition

2014
Atomic layer deposition (ALD) is a technique for growing thin films for a wide range of applications. ALD is a special variant of the chemical vapor deposition (CVD) technique where gaseous reactants (precursors) are introduced into the reaction chamber for forming the desired material via chemical surface reactions.
Mikko Ritala, Markku Leskelä, Jaakko Niinistö   +2 more
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Monolayer thickness in atomic layer deposition

Thin Solid Films, 1996
The growth rate in atomic layer deposition (ALD) or epitaxy (ALE) is usually saturated to a constant level when appropriate operation conditions are attained. The layer thickness deposited in one cycle is limited by adsorption. A simple molecular description for chemisorption and surface reactions is suggested and shows that both reaction steps have an
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Atomic and molecular layer deposition for surface modification

Journal of Solid State Chemistry, 2014
Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gas-solid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces.
Vähä-Nissi, M., Sievänen, J., Salo, E., Heikkilä, P., Kenttä, E., Johansson, Leena-Sisko, Koskinen, J.T., Harlin, Ali   +8 more
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Atomic Layer Deposition for Nanotechnology

2011
Atomic layer deposition (ALD) is a thin film chemical vapor deposition technology that is uniquely able to deliver extremely conformal, pin hole free, nanometer thick films. It is finding a large number of applications in nanotechnology such as display technology, integrated circuit (IC) fabrication, solar cells and catalysis.
Kenneth C. Cadien, A. Foroughi-Abari
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Heteroleptic Precursors for Atomic Layer Deposition

ECS Transactions, 2014
As the atomic layer deposition (ALD) method is based on sequential, self-limiting surface reactions the precursor chemistry is the key to a successful processing of conformal high quality thin films. ALD precursor chemistry has traditionally been based on homoleptic compounds such as, but not limited to, metal halides, alkylamides and alkoxides ...
Timothee Blanquart, Jaakko Niinistö, Markku Leskelä, Mikko Ritala, Sanni Seppälä   +4 more
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Atomic Layer Deposition in MEMS Technology

2010
Atomic layer deposition can be defined as a film deposition technique that is based on the sequential use of self-terminating gas–solid reactions. ALD can offer significant advantages in MEMS processing compared to traditional film deposition methods. This chapter describes atomic layer deposition and its different processes and applications.
Puurunen, Riikka L., Kattelus, Hannu, Suntola, Tuomo   +2 more
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Atomic Layer Deposition

2021
van Ommen, J. Ruud, Goulas, Aristeidis, Puurunen, Riikka, L.   +3 more
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Plasma atomic layer deposition

Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in ...
Knoops, H.C.M., de Peuter, K., Kessels, W.M.M.   +2 more
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