Adsorption of atomic and molecular oxygen on Si(100)2x1: coverage dependence of the Auger O KVV lineshape. [PDF]
By means of Auger electron spectroscopy (AES) we have monitored the room temperature adsorption of O2 and N2O on the clean Si(0 0 1)2 × 1 surface. We have found, for the first time, a significant variation in the intensity ratio of the K L1 L1 and K L23 ...
Borg, H.J. +5 more
core +17 more sources
Ambient pressure X-ray absorption spectroscopy at ME2-BL02B of SSRF and its application in catalysis
BackgroundThe traditional soft X-ray absorption spectroscopy (XAS) method can only work under ultra-high vacuum conditions and cannot be used to detect changes in the electronic structure of samples under real conditions.
WANG Wei +5 more
doaj +1 more source
The chemical shift of core level binding energies makes electron spectroscopy for chemical analysis (ESCA) a workhorse analytical tool for science and industry. For some elements, close lying and overlapping spectral features within the natural life time
Artur Born +6 more
doaj +1 more source
Charge-induced chemical dynamics in glycine probed with time-resolved Auger electron spectroscopy
In the present contribution, we use x-rays to monitor charge-induced chemical dynamics in the photoionized amino acid glycine with femtosecond time resolution.
David Schwickert +24 more
doaj +1 more source
Surface segregation and diffusion of W, Ta, Cr, O and S after thermal annealing of EUROFER97 were studied in-situ. The sample was prepared by polishing, annealing up to 300°C and 3 keV Ar sputtering.
Jila Shams-Latifi +3 more
doaj +1 more source
DEPTH MEASUREMENT OF DISRUPTED LAYER ON SILICON WAFER SURFACE USING AUGER SPECTROSCOPY METHOD
The paper proposes a method for depth measurement of a disrupted layer on silicon wafer surface which is based on application of Auger spectroscopy with the precision sputtering of surface silicon layers and registration of the Auger electron yield ...
V. A. Solodukha +2 more
doaj +1 more source
Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon [PDF]
Auger electron spectroscopy combined with ion etching was used to study the effect of ion doping on the distribution profiles of atoms in silicon in contact with its surface. It has been established that preliminary implantation of Ba+ ions with E0=0.5-1
Donaev S.B. +5 more
doaj +1 more source
Two-photon excitation and relaxation of the 3d-4d resonance in atomic Kr [PDF]
Two-photon excitation of a single-photon forbidden Auger resonance has been observed and investigated using the intense extreme ultraviolet radiation from the free electron laser in Hamburg.
A. Mihelic +12 more
core +1 more source
Metallurgical Tests in Endodontics: A Narrative Review
Since there are no reviews of the literature on this theme, the aim of this narrative review is to summarize the metallurgical tests used in endodontics, pointing out their functional use and their pros and cons and giving readers a user-friendly guide ...
Alessio Zanza +5 more
doaj +1 more source
Laser induced selective electroless copper plating on polyurethane using EDTA-Cu as active material
Using EDTA-Cu as the active material and polyurethane as the matrix, flexible cathodes were fabricated by laser-induced electroless copper plating process (LPKF-LDS) and characterized by SEM, X-ray energy spectrum and Auger electron spectroscopy ...
Binggong Yan +5 more
doaj +1 more source

