Results 211 to 220 of about 194,426 (295)

Spatiotemporal Reservoir Computing with a Reconfigurable Multifunctional Memristor Array. [PDF]

open access: yesAdv Mater
Kim S   +10 more
europepmc   +1 more source

Statistically Resolving Thickness‐Dependent Electrical Characteristics in Multilayer‐MoS2 Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee   +11 more
wiley   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu   +7 more
wiley   +1 more source

A Systematic Review on the Applications of Uppaal. [PDF]

open access: yesSensors (Basel)
Grobelna I, Gajewski K, Karatkevich A.
europepmc   +1 more source

Ultrasmall Platinum Nanoparticles for Radiation‐Enhanced Cancer Therapy

open access: yesAdvanced Functional Materials, EarlyView.
This work proposes a nanomedicine‐based strategy to enhance X‐ray radiotherapy for cancer treatment. Ultrasmall Pt‐NPs exhibit catalase‐like activity that may contribute to modulation of the tumor microenvironment and amplify interactions between radiation and biological matter, leading to increased DNA damage.
Miguel Encinas‐Gimenez   +8 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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