Results 41 to 50 of about 57,660 (268)

Perturbed backward stochastic differential equations

open access: yesMathematical and Computer Modelling, 2012
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Janković, Svetlana   +2 more
openaire   +2 more sources

Bioinspired Shape‐Memory Hook Fasteners With Programmable Interlocking and Silent Release

open access: yesAdvanced Engineering Materials, EarlyView.
Bioinspired hook fasteners made from epoxy shape‐memory polymers are shown to switch between strong, secure attachment and gentle, silent release when heated. By combining programmable geometry and material response, these adaptive fasteners outperform commercial systems in strength and noise control, enabling new solutions for robotics, medical ...
Maria I. Vallejo Ciro   +3 more
wiley   +1 more source

Stochastic PDEs and Infinite Horizon Backward Doubly Stochastic Differential Equations

open access: yesJournal of Applied Mathematics, 2012
We give a sufficient condition on the coefficients of a class of infinite horizon BDSDEs, under which the infinite horizon BDSDEs have a unique solution for any given square integrable terminal values.
Bo Zhu, Baoyan Han
doaj   +1 more source

Generalized BSDEs driven by RCLL martingales with stochastic monotone coefficients

open access: yesModern Stochastics: Theory and Applications, 2023
A solution is given to generalized backward stochastic differential equations driven by a real-valued RCLL martingale on an arbitrary filtered probability space.
Badr Elmansouri, Mohamed El Otmani
doaj   +1 more source

A general comparison theorem for 1-dimensional anticipated BSDEs

open access: yes, 2011
Anticipated backward stochastic differential equation (ABSDE) studied the first time in 2007 is a new type of stochastic differential equations. In this paper, we establish a general comparison theorem for 1-dimensional ABSDEs with the generators ...
E. Pardoux   +7 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Almost Surely Exponential Stability of Numerical Solutions for Stochastic Pantograph Equations

open access: yesAbstract and Applied Analysis, 2014
Our effort is to develop a criterion on almost surely exponential stability of numerical solution to stochastic pantograph differential equations, with the help of the discrete semimartingale convergence theorem and the technique used in stable analysis ...
Shaobo Zhou
doaj   +1 more source

Double barrier reflected BSDEs with stochastic Lipschitz coefficient

open access: yesModern Stochastics: Theory and Applications, 2017
This paper proves the existence and uniqueness of a solution to doubly reflected backward stochastic differential equations where the coefficient is stochastic Lipschitz, by means of the penalization method.
Mohamed Marzougue, Mohamed El Otmani
doaj   +1 more source

Slight Truncation Changes in Iron Oxide Nanocubes Strongly Affect Their Magnetic Properties

open access: yesAdvanced Functional Materials, EarlyView.
Subtle variations in nanoparticle morphology can lead to significant changes in functional properties. An automated shape‐fitting method captures minor differences in corner truncation between iron oxide nanocubes of similar sizes synthesized under identical conditions, revealing pronounced disparities in their magnetic and hyperthermia behavior ...
Kingsley Poon   +7 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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