Results 231 to 240 of about 7,037,676 (386)

Automatic multi-IMU-based deep learning evaluation of intensity during static standing balance training exercises. [PDF]

open access: yesJ Neuroeng Rehabil
Jabri S   +8 more
europepmc   +1 more source

Decoupling Size and Electronic Effects in Doped SrTiO3 Photocatalysts Through Surface Area–Normalized CO2 Hydrogenation Rates

open access: yesAdvanced Functional Materials, EarlyView.
Exploring the photocatalytic reverse water–gas shift (RWGS) reaction on doped SrTiO3 nanoparticle films, reveals that normalizing catalytic rates by the catalyst's specific surface area (SSA) disentangled surface area effects from the catalyst's intrinsic material properties.
Dikshita Bhattacharyya   +6 more
wiley   +1 more source

A Peptide Nucleic Acid‐Functionalized Heterojunction Thin Film Transistor as a Scalable and Reusable Platform for Label‐Free Detection of MicroRNA

open access: yesAdvanced Functional Materials, EarlyView.
A miniaturized, label‐free, and enzyme‐free biosensor (miR‐TFT) enables direct electrical detection of microRNA (miRNA) with single‐nucleotide specificity and a detection limit of 0.6 fM. Built on a tri‐channel In2O3/ZnO heterojunction and functionalized with bespoke peptide nucleic acid (PNA) probes, the device is robust, reusable, and compatible with
Wejdan S. Al Ghamdi   +5 more
wiley   +1 more source

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu   +12 more
wiley   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

open access: yesAdvanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon   +8 more
wiley   +1 more source

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