Results 241 to 250 of about 1,322,041 (279)
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Scattering-limited and ballistic transport in a nano-CMOS circuit
Microelectronics Journal, 2009The mobility and saturation velocity in the nanoscale metal oxide semiconductor field effect transistor (MOSFET) are revealed to be ballistic; the former in a channel whose length is smaller than the scattering-limited mean free path. The drain-end carrier velocity is smaller than the ultimate saturation velocity due to the presence of a finite ...
Ismail Saad +4 more
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Ballistic limit equation for equipment placed behind satellite structure walls
International Journal of Impact Engineering, 2008 Ballistic limit equation for equipment placed behind satellite structure ...
Robin Putzar, Shannon Ryan
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Force on a Slow Object in a Fermi Liquid in the Ballistic Limit
AIP Conference Proceedings, 2006We study normal Fermi liquids at low temperatures where the collisions of quasiparticles with each other can be neglected. We calculate the force exerted by the liquid on a slowly moving body. Our calculation is exact within the Fermi liquid theory, so that it takes into account all Fermi‐liquid interaction effects as well as the effect caused by ...
Thuneberg Erkki Veikko, Virtanen Timo
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Limitations of split-gate ballistic electron waveguides
Journal of Applied Physics, 2003We study the ballistic conductance of electron waveguides created by lateral depletion of the two-dimensional (2D) electron gas caused by negatively biased split surface Schottky gates. The maximal number of resolved steps of the quantized conductance staircase and their temperature stability are examined as functions of slit width w, depth d of the 2D
O. E. Raichev, P. Debray
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1978
Abstract : The critical impact velocity for the perforation of a target can be calculated with four techniques, two of which involve extrapolation of residual speed data and two of which involve a statistical approach. These techniques are described briefly and a nomenclature associated with each technique is suggested. The limit velocity for 30 groups
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Abstract : The critical impact velocity for the perforation of a target can be calculated with four techniques, two of which involve extrapolation of residual speed data and two of which involve a statistical approach. These techniques are described briefly and a nomenclature associated with each technique is suggested. The limit velocity for 30 groups
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Effect of target span and configuration on the ballistic limit
International Journal of Impact Engineering, 2012Abstract Three-dimensional numerical simulations were carried out with ABAQUS/Explicit finite element code to study the influence of target span and configuration on its ballistic limit. 1 mm thick 1100-H12 aluminum targets of varying span diameter and configuration were impacted by blunt and ogive nosed projectiles of 19 mm diameter and 52.5 g mass.
M.A. Iqbal +5 more
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Compact modeling of nanoscale MOSFETs in the ballistic limit
Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710), 2004We present a compact model based on the Landauer transmission theory for the silicon quantum wire/well metal-oxide-semiconductor field effect transistor (MOSFET) working in the ballistic limit. This model captures the static current-voltage characteristics in all the operation regimes, below and above threshold voltage.
D. Jimenez +5 more
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UNDERSTANDING BALLISTIC LIMIT SCALING LAWS
Ballistics 2025A series of critical perforation velocity experiments have been performed, where tungsten alloy spheres were shot at thin mild steel plates. The experiments were repeated at four geometric scales; with projectile diameters of 1.5, 3, 5, and 10 mm; and corresponding plate thicknesses of 0.872, 1.7, 2.9, 5.8 mm.
F. Gokstorp +4 more
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The ballistic FET: design, capacitance and speed limit
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2002In this paper we present a design methodology for the ballistic FET (BFET) which illuminates many topics currently under discussion such as the injection velocity, the role of the contacts, and the meaning of the capacitance and mobility. Both InGaAs/InAlAs in the 20-30 nm gate length range, and Si/SiO/sub 2/ FETs in the 10-20 nm range are simulated ...
P.M. Solomon, S.E. Laux
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Scattering-limited and ballistic transport in nanoelectronic devices
2009 2nd International Workshop on Electron Devices and Semiconductor Technology, 2009The fundamental processes on nanoscale that may influence the design of nanoelectronic chips, sensors, and systems is presented. The focus is on the breakdown of Ohm's law in nanoscale devices extensively being used to assess the performance of a “system-on-a-chip,” may it be for bio, chemical, physical or engineering applications.
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