A Symmetry-Based Perspective Correction Method for High-Speed Deformation Analysis of Circular Blast-Loaded Plates. [PDF]
Shehu E +5 more
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A feasibility study of chromatographic methods with mass spectrometry, flame ionization detector (FID), and micro electron capture detector (μECD) for laboratory adoption of organic gunshot residue analysis at trace levels. [PDF]
Fiordigigli A +5 more
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Dataset of high-speed camera measurements from impact-tested reinforced concrete beams. [PDF]
Peterson V.
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Lessons from the "Trial of the Century" and early forensic science efforts: Beginnings of U.S. forensic science and the little-known role of the National Bureau of Standards. [PDF]
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Development of a Novel Soft Tissue Measurement Device for Individualized Finite Element Modeling in Custom-Fit CPAP Mask Evaluation. [PDF]
Martelly E +4 more
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Autopsy findings in victims of gunshot injuries: wound ballistic considerations based on test shots to simulants and composite models. [PDF]
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BALLISTICS FOR THE NEUROSURGEON
Neurosurgery, 2008Craniocerebral injuries from ballistic projectiles are qualitatively different from injuries in unconfined soft tissue with similar impact. Penetrating and nonpenetrating ballistic injuries are influenced not only by the physical properties of the projectile, but also by its ballistics. Ballistics provides information on the motion of projectiles while
Rahul, Jandial +4 more
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Observation of ballistic holes
Physical Review Letters, 1988We report the first direct observation of ballistic hole transport in semiconductors, via energy spectroscopy experiments. Light holes are preselected and injected via tunnelling into 31 nm thick p+ GaAs layers. About 10% of the injected holes have been found to traverse ballistically maintaining distributions ≈ 35 meV wide, with a mean free path of ...
, Heiblum, , Seo, , Meier, , Hickmott
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Ballistic and near ballistic transport in GaAs
IEEE Electron Device Letters, 1980Calculations which take into account collisions and intervally transfer in GaAs indicate that the electron transport in short GaAs structures is near-ballistic. High drift velocities (in excess of 5-107cm/s) may be achieved leading to potentially superior device performance.
M.S. Shur, L.F. Eastman
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