Results 211 to 220 of about 22,098 (322)

Interfaces in Large Area 2D Materials Integration: From Epitaxial Growth and Clean Transfer to Interface‐Dominated Performance

open access: yesAdvanced Materials Interfaces, Volume 13, Issue 6, 16 March 2026.
This Review proposes an interface‐centric framework for large‐area 2D materials integration, linking wafer‐scale single‐crystal epitaxy, clean transfer and deterministic stacking, and interface‐dominated structure–property–device correlations. We summarize how interfacial symmetry and energetics govern nucleation/coalescence and adhesion‐controlled ...
Han Chen   +4 more
wiley   +1 more source

Unlocking the THz Emission Potential of Sputtered Germanium Thin Films Through Structural and Optoelectronic Properties Optimization

open access: yesAdvanced Optical Materials, Volume 14, Issue 10, 13 March 2026.
An optimized RF‐sputtering process is developed for the deposition of n‐doped germanium thin films exhibiting strongly enhanced THz emission under fs‐laser excitation. By tuning deposition temperature and thickness, highly (111)‐oriented films with an effective bandgap of ∼0.77 eV and improved optoelectronic properties are achieved, leading to a ∼35 ...
Sanjit Varma   +7 more
wiley   +1 more source

Emerging Advanced Electronic Packaging Materials for Thermal Management in Power Electronics

open access: yesAdvanced Science, Volume 13, Issue 17, 23 March 2026.
This review surveys emerging materials for thermal management in advanced electronic packaging, with emphasis on ceramic substrates and thermal interface materials. Multiscale simulations and mechanistic analyses are highlighted, alongside the emerging role of artificial intelligence in predicting thermal properties and guiding design, offering ...
Yongjun Huo   +11 more
wiley   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

open access: yesAdvanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

Bandgap Engineering of Nitrogen‐Doped Monolayer WSe2 Superlattice and its Application to Field Effect Transistor

open access: yesAdvanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
Random nitrogen substitution breaks translational symmetry in WSe2, creating localized impurity states near the band gap. In contrast, periodic nitrogen doping forms a superlattice, a man‐made crystal, that restores translational symmetry, broadening impurity states into dispersive sub‐bands that merge with the valence band. This enables controlled and
Yi‐Cheng Lo   +2 more
wiley   +1 more source

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