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Direct Calculation of Band-Pass Filters

open access: yesИзвестия высших учебных заведений России: Радиоэлектроника, 2022
Introduction. When calculating band-pass filters (BPF), the circuit elements can be determined by converting the parameters of prototype low-pass filters (LPF).
E. N. Chervinskiy
doaj   +1 more source

Calculation of Band Offsets of Mg(OH)2-Based Heterostructures

open access: yesElectronic Materials, 2021
The band alignment of Mg(OH)2-based heterostructures is investigated based on first-principles calculation. (111)-MgO/(0001)-Mg(OH)2 and (0001)-wurtzite ZnO/(0001)-Mg(OH)2 heterostructures are considered. The O 2s level energy is obtained for each O atom
Masaya Ichimura
doaj   +1 more source

Calculation of the Band Structure for GaAs and ZnTe Nanoparticles from the Density Functional Theory Based on LDA, GGA and HSE06 [PDF]

open access: yesEurasian Journal of Science and Engineering, 2019
The energy band structure and density of state (DOS) are calculated using density functional theory (DFT) for GaAs and ZnTe semiconductors for both the bulk and nanoparticles (NPs) and implemented in the CASTEP code.
Botan Jawdat Abdullah   +1 more
doaj   +1 more source

Study on optimization of pouring time for late poured band

open access: yesFrontiers in Built Environment, 2023
The setting of the late poured band is an effective measure to control the differential settlement and the stress concentration of the foundation.
Liang Xie   +5 more
doaj   +1 more source

Band Structure Calculation and Optical Properties of Ag3AsS3 Crystals

open access: yesФізика і хімія твердого тіла, 2023
In the study, band structure calculation in the points of high symmetry of the first Brillouin zone and alongside the lines that connect them has been derived by using CASTEP programs in which the pseudopotential method with the basis in the form of ...
M.Ya. Rudysh   +4 more
doaj   +1 more source

Study of Electronic Properties of GaAs Semiconductor Using Density Functional Theory

open access: yesComputational and Experimental Research in Materials and Renewable Energy, 2021
The properties of GaAs material in zinc blende type was calculated using Hiroshima Linear Plane Wave program based on the Density Functional Theory. This calculation aims to determine electronic properties of GaAs material are based on Density of States ...
Fikri Abdi Putra   +2 more
doaj   +1 more source

Flat-Band in Pyrochlore Oxides: A First-Principles Study

open access: yesNanomaterials, 2019
Using a first-principles electronic band calculation, we obtained a quasi flat-band near the Fermi level for the six pyrochlore oxides, A2B2O7. These quasi flat-bands are mostly characterized by the s-orbitals of the A-site.
Izumi Hase   +2 more
doaj   +1 more source

Synthesis, Structures and Properties of Molecular Conductors Based on Bis-Fused Donors Composed of (Thio)Pyran-4-ylidene-1,3-dithiole and Tetraselenafulvalene

open access: yesCrystals, 2012
Bis-fused donors composed of (thio)pyran-4-ylidene-1,3-dithiole and tetraselenafulvalene (1a, 2a) and their bis(methylthio) derivatives (1b, 2b) were synthesized.
Yohji Misaki   +4 more
doaj   +1 more source

Indirect-to-direct band gap transition and optical properties of Cs2BiAgX6 with mechanical strains: the density functional theory investigation

open access: yesJournal of Materials Research and Technology, 2022
The last research of Cs2BiAgX6 (X = Cl, Br) exhibiting a desired band gap in the visible imply that the compounds maybe as a potential candidate for CH3NH3PbI3.
Xiao Zhang   +4 more
doaj   +1 more source

Temperature Dependence of Crystal Structures and Band Parameters in Quantum Spin Liquid β′-EtMe3Sb[Pd(dmit)2]2 and Related Materials

open access: yesCrystals, 2018
In an isostructural series of anion radical salts β′-(Me4-xEtxZ)[Pd(dmit)2]2 (Z = P, As, Sb; x = 0, 1, 2), [Pd(dmit)2]2− units form a two-dimensional Mott insulator layer with a quasi-isosceles triangular lattice. The anisotropy of the triangular lattice
Kohei Ueda, Takao Tsumuraya, Reizo Kato
doaj   +1 more source

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