Results 111 to 120 of about 5,212,798 (338)

Optical and transport gaps in gated bilayer graphene

open access: yes, 2011
We discuss the effect of disorder on the band gap measured in bilayer graphene in optical and transport experiments. By calculating the optical conductivity and density of states using a microscopic model in the presence of disorder, we demonstrate that ...
D. S. L. Abergel   +4 more
core   +1 more source

Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection

open access: yesScientific Reports, 2017
We, for the first time, provide the experimental demonstration on the band gap engineering of layered hexagonal SnSe2 nanostructured thin films by varying the thickness. For 50 nm thick film, the band gap is ~2.04 eV similar to that of monolayer, whereas
E. P. Mukhokosi   +2 more
semanticscholar   +1 more source

pH‐mediated activation of the lysosomal arginine sensor SLC38A9

open access: yesFEBS Letters, EarlyView.
Cells monitor nutrient levels via the lysosomal transporter SLC38A9 to activate the mechanistic target of rapamycin complex 1 (mTORC1). This study reveals that SLC38A9 function is regulated by pH. We identified histidine 544 as a critical pH sensor that undergoes conformational changes to control amino acid efflux from lysosomes; therefore, it ...
Xuelang Mu, Ampon Sae Her, Tamir Gonen
wiley   +1 more source

Field induced gap infrared detector [PDF]

open access: yes, 1990
A tunable infrared detector which employs a vanishing band gap semimetal material provided with an induced band gap by a magnetic field to allow intrinsic semiconductor type infrared detection capabilities is disclosed.
Elliott, C. Thomas
core   +1 more source

Ferromagnetic redshift of the optical gap in GdN

open access: yes, 2007
We report measurements of the optical gap in a GdN film at temperatures from 300 to 6K, covering both the paramagnetic and ferromagnetic phases. The gap is 1.31eV in the paramagnetic phase and red-shifts to 0.9eV in the spin-split bands below the Curie ...
A. R. H. Preston   +11 more
core   +1 more source

PARP inhibition and pharmacological ascorbate demonstrate synergy in castration‐resistant prostate cancer

open access: yesMolecular Oncology, EarlyView.
Pharmacologic ascorbate (vitamin C) increases ROS, disrupts cellular metabolism, and induces DNA damage in CRPC cells. These effects sensitize tumors to PARP inhibition, producing synergistic growth suppression with olaparib in vitro and significantly delayed tumor progression in vivo. Pyruvate rescue confirms ROS‐dependent activity.
Nicolas Gordon   +13 more
wiley   +1 more source

Investigation of threshold voltage shift and gate leakage mechanisms in normally off AlN/Al0.05Ga0.95N HEMTs on Si substrate

open access: yesAIP Advances, 2020
In this study, normally off AlN/Al0.05Ga0.95N high-electron-mobility transistors (HEMTs) on a Si substrate were fabricated by adjusting the surface states of the heterostructure.
Weihang Zhang   +5 more
doaj   +1 more source

Edge Configurational Effect on Band Gaps in Graphene Nanoribbons

open access: yes, 2014
In this Letter, we put forward a resolution to the prolonged ambiguity in energy band gaps between theory and experiments of fabricated graphene nanoribbons (GNRs).
Deepika   +3 more
core   +2 more sources

Plecstatin inhibits hepatocellular carcinoma tumorigenesis and invasion through cytolinker plectin

open access: yesMolecular Oncology, EarlyView.
The ruthenium‐based metallodrug plecstatin exerts its anticancer effect in hepatocellular carcinoma (HCC) primarily through selective targeting of plectin. By disrupting plectin‐mediated cytoskeletal organization, plecstatin inhibits anchorage‐dependent growth, cell polarization, and tumor cell dissemination.
Zuzana Outla   +10 more
wiley   +1 more source

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

open access: yesNanoscale Research Letters, 2019
We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM ...
Yue Peng   +6 more
doaj   +1 more source

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