Results 111 to 120 of about 284,732 (318)

Origin of multiple band gap values in single width nanoribbons

, 2016
Deterministic band gap in quasi-one-dimensional nanoribbons is prerequisite for their integrated functionalities in high performance molecular-electronics based devices.
GOYAL, D, KUMAR, R, KUMAR, S, SHUKLA, A, Shukla, Alok, Kumar, Rakesh, Deepika, Kumar, Shailesh   +7 more
core   +1 more source

The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs

IEEE Journal of the Electron Devices Society
In this paper, an integrated device which realized the dual-mode integration of power amplifier (PA) and radio frequency (RF) switch based on GaN dual-gate (DG) structure is designed and fabricated.
Meng Zhang, Haozheng Wang, Ling Yang, Bin Hou, Mei Wu, Qing Zhu, Minhan Mi, Xu Zou, Chunzhou Shi, Qian Yu, Wenliang Liu, Hao Lu, Xiaohua Ma, Yue Hao   +13 more
doaj   +1 more source

The Optimization of Spacer Engineering for Capacitor-Less DRAM Based on the Dual-Gate Tunneling Transistor

Nanoscale Research Letters, 2018
The DRAM based on the dual-gate tunneling FET (DGTFET) has the advantages of capacitor-less structure and high retention time. In this paper, the optimization of spacer engineering for DGTFET DRAM is systematically investigated by Silvaco-Atlas tool to ...
Wei Li, Hongxia Liu, Shulong Wang, Shupeng Chen, Qianqiong Wang   +4 more
doaj   +1 more source

IMPDH inhibition enhances cytarabine efficacy in SAMHD1‐expressing leukaemia cells via guanine nucleotide depletion

Molecular Oncology, EarlyView.
Cytarabine is a key therapy for acute myeloid leukaemia (AML), but its efficacy is limited by the dNTPase SAMHD1, which hydrolyses its active metabolite. Screening nucleotide biosynthesis inhibitors revealed that IMPDH inhibitors selectively sensitise SAMHD1‐proficient AML cells to cytarabine.
Miriam Yagüe‐Capilla, Christopher Dirks, Caroline Eiden, Sonja K. Fesenmayer, Femke M. Hormann, Yolande Klootsema, Ingrid Lilienthal, Si Min Zhang, Nikolas Herold, Sean G. Rudd   +9 more
wiley   +1 more source

Band-gap bowing and p-type doping of (Zn, Mg, Be)O wide-gap semiconductor alloys: a first-principles study

, 2008
Using a first-principles band-structure method and a special quasirandom structure (SQS) approach, we systematically calculate the band gap bowing parameters and p-type doping properties of (Zn, Mg, Be)O related random ternary and quaternary alloys.
Shi HL Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address: hlshi@semi.ac.cn, Shi HL, Duan Y   +2 more
core  

A Multi-level Memristor Based on Al-Doped HfO2 Thin Film

Nanoscale Research Letters, 2019
Non-volatile memory (NVM) will play a very important role in the next-generation digital technologies, including the Internet of things. The metal-oxide memristors, especially based on HfO2, have been favored by lots of researchers because of its simple ...
Lei Wu, Hongxia Liu, Jiabin Li, Shulong Wang, Xing Wang   +4 more
doaj   +1 more source

Keratin 19 as a prognostic marker and contributing factor of metastasis and chemoresistance in high‐grade serous ovarian cancer

Molecular Oncology, EarlyView.
Keratin 19 (KRT19) is overexpressed in high‐grade serous ovarian cancer with high levels of Kallikrein‐related peptidases (KLK) 4–7 and is associated with poor survival. In vivo analyses demonstrate that elevated KRT19 increases peritoneal tumour burden.
Sophia Bielesch, Isabel Vogel, Sina Nokodian, Johanna Moeller, Antonia Blechschmidt, Vicky Hecht, Vanessa Kuentzel, Katharina Thiedig, Melissa Schwab, Oliver Schilling, Holger Bronger, Marion Kiechle, Viktor Magdolen, Tobias Dreyer   +13 more
wiley   +1 more source

Advanced GaN/(In)AlGaN MMICs for applications in space from K-band to W-band frequencies

, 2022
S.133-136This paper describes recent advances in GaN/AlInGaN monolithically microwave integrated circuits (MMICs) on semi-insulating SiC for the frequency range from 18 GHz to 94 GHz based on the GaN25 and GaN10 technologies with gate lengths of 250 nm ...
Schwantuschke, Dirk, Brueckner, Peter, Mikulla, Michael, Quay, Rüdiger, Ambacher, Oliver, Dammann, Michael, Chéron, J.   +6 more
core  

Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer

Micromachines
In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer.
Qian Yu, Chunzhou Shi, Ling Yang, Hao Lu, Meng Zhang, Xu Zou, Mei Wu, Bin Hou, Wenze Gao, Sheng Wu, Xiaohua Ma, Yue Hao   +11 more
doaj   +1 more source

Light-Induced Gaps in Semiconductor Band-to-Band Transitions

Physical Review Letters, 2004
We observe a triplet around the third harmonic of the semiconductor band gap when exciting 50-100 nm thin GaAs films with 5 fs pulses at 3 x 10(12) W/cm(2). The comparison with solutions of the semiconductor Bloch equations allows us to interpret the observed peak structure as being due to a two-band Mollow triplet. This triplet in the optical spectrum
Q T, Vu, H, Haug, O D, Mücke, T, Tritschler, M, Wegener, G, Khitrova, H M, Gibbs   +6 more
openaire   +3 more sources