Results 241 to 250 of about 2,748,623 (319)
Some of the next articles are maybe not open access.
Barrier width: a powerful parameter for hydrogen transfer reactions
Journal of the Chemical Society, Chemical Communications, 1975Observable consequences of tunnelling are reproduced by calculating kinetic parameters as a function of barrier width and limiting values are predicted.
M. Simonyi, I. Mayer
semanticscholar +2 more sources
Surface recombination velocity and barrier width from surface photovoltage measurements
Journal of Applied Physics, 1985Data from surface photovoltage measurements on CdSe films are analyzed using two theoretical treatments. Only the more accurate theory is found to be satisfactory and yields values, not only of minority carrier-diffusion lengths, but also surface barrier widths and surface recombination velocities.
G. Storr, D. Haneman
semanticscholar +2 more sources
Effect of Barrier Width on Bias-Dependent Tunnelling in Ferromagnetic Junctions
Chinese Physics Letters, 2004We present a finite temperature theory for bias-dependent tunnelling in ferromagnetic tunnelling junctions. The effects of the barrier width d on the tunnelling magnetoresistance (TMR) and its sign change behaviour are discussed with this theory. Numerical results show that both the zero-bias TMR and the critical voltage Vc at which the TMR changes its
Li Fei-Fei +4 more
semanticscholar +2 more sources
2021 Devices for Integrated Circuit (DevIC), 2021
We study the effect of well width (Ww) and barrier width (Wb) on I-V characteristics of symmetric armchair graphene nanoribbon (AGNR) based resonant tunneling diode (RTD) structure.
M. Mishra, N. Das, N. Sahoo, T. Sahu
semanticscholar +1 more source
We study the effect of well width (Ww) and barrier width (Wb) on I-V characteristics of symmetric armchair graphene nanoribbon (AGNR) based resonant tunneling diode (RTD) structure.
M. Mishra, N. Das, N. Sahoo, T. Sahu
semanticscholar +1 more source
Barrier Width Dependence of Optical Properties in Semiconductor Superlattices
, 1992J. Song, J. F. Zhou, J. M. Jacob
semanticscholar +2 more sources
Low temperature physics (Woodbury, N.Y., Print), 2020
The dependences of the current and integral intraband terahertz electroluminescence intensity on the electric field in the n-InGaAs/GaAs heterostructures with asymmetric double tunnel-coupled quantum wells under the conditions of bipolar lateral ...
M. Vinoslavskii +4 more
semanticscholar +1 more source
The dependences of the current and integral intraband terahertz electroluminescence intensity on the electric field in the n-InGaAs/GaAs heterostructures with asymmetric double tunnel-coupled quantum wells under the conditions of bipolar lateral ...
M. Vinoslavskii +4 more
semanticscholar +1 more source
On the width of Schottky barriers
Solid-State Electronics, 1982Abstract The paper presents numerical computations of the Schottky barrier width, made by taking the free carrier space charge into account, and points to substantial discrepancies between the actual and conventionally assumed volume as a function of current.
Moreau, Y. +2 more
openaire +2 more sources
Fission widths and multi-dimensional barrier penetration
Nuclear Physics A, 1979Abstract A multi-dimensional fission barrier is constructed which is simple enough to permit a complete partial-wave solution of the coupled-channel scattering problem. By employing it to study the multi-channel barrier resonances it produces, we discover that their widths are not directly related to any simple property of the elements of the ...
B.V. Carlson, K.W. McVoy, M.C. Nemes
openaire +1 more source
Advanced Optical Materials, 2018
Solution‐processed, self‐organized multiple quantum well (MQW) perovskites possess good film coverage and high photoluminescence quantum efficiency, which are promising for high performance light‐emitting diodes (LEDs).
Maotao Yu +14 more
semanticscholar +1 more source
Solution‐processed, self‐organized multiple quantum well (MQW) perovskites possess good film coverage and high photoluminescence quantum efficiency, which are promising for high performance light‐emitting diodes (LEDs).
Maotao Yu +14 more
semanticscholar +1 more source
Superlattices and Microstructures, 1998
Generalized-barrier parameters are studied theoretically for rectangular and trapezoidal single-barriers as well as parallel-plane ones, which are basic units for double-barrier and multiple-barrier structures. Analytical expressions for these parameters are derived by taking into account the position-dependent effective-mass effect.
X.D. Zhao, H. Yamamoto, K. Taniguchi
openaire +1 more source
Generalized-barrier parameters are studied theoretically for rectangular and trapezoidal single-barriers as well as parallel-plane ones, which are basic units for double-barrier and multiple-barrier structures. Analytical expressions for these parameters are derived by taking into account the position-dependent effective-mass effect.
X.D. Zhao, H. Yamamoto, K. Taniguchi
openaire +1 more source

