Results 161 to 170 of about 1,262,902 (327)

Model for Wireless Base Station Goodput Evaluation in Vehicular Communication Systems

, 1970
Aleksandrs Ipatovs, E. Petersons, J. Jansons   +2 more
openalex   +2 more sources

Catalytic TiO2 with Self‐Assembled Monolayer for Highly Sensitive, Selective, and Non‐Invasive Monitoring of Sweat L‐Cysteine

Advanced Functional Materials, EarlyView.
A self‐assembled monolayer of 3‐mercaptopropyltrimethoxysilane (MPTS) molecular receptor and titanium oxide‐modified carbon cloth (MPTS/TiO2/CC) was synthesized for the specific detection of sweat L‐cysteine, which is associated with the precision neutrition, cardiovascular system and neuro system.
Xiangjie Chen, Jia Zhu, Jian Shao, Taisong Pan, Guang Yao, Min Gao, Jian Yang, Rui Zhao, Libin Huang, Tao Li, Huanyu Cheng, Yuan Lin   +11 more
wiley   +1 more source

Band-Notched Dual-Polarized Antennas for 2G/3G/4G/5G Base Station Using the GCPW DGS-DMS Hybrid Filter

IEEE Access
Two broadband dual-polarized band-notched crossed dipole antennas based on the grounded coplanar waveguide (GCPW) filter for 2G/3G/4G/5G base station are proposed in this paper. Two antennas with two and three radiation nulls are displayed to demonstrate
Min Li, Daotong Li, Chongcai Xu, Haixia Li, Feng Xu   +4 more
doaj   +1 more source

Gravity base stations in Indonesia and in the southwest Pacific

, 1976
P. A. Jezek
openalex   +2 more sources

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

Advanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang, Jaerok Kim, Sang‐Min Lee, Sungpyo Baek, Saeroonter Oh, Yoonmyung Lee, Sungjoo Lee   +6 more
wiley   +1 more source

Gaussian‐Sigmoid Reinforcement Transistors: Resolving Exploration‐Exploitation Trade‐Off Through Gate Voltage‐Controlled Activation Functions

Advanced Functional Materials, EarlyView.
The characteristics of a vertical n–p–i–p heterostructure transistor device, which exhibits a voltage‐tunable transition between Gaussian and sigmoid functions, are investigated. The mixed state of the transfer curve enables the utilization of both exploitation and exploration, improving computational performance in reinforcement learning tasks ...
Jisoo Park, Juhyung Seo, Ryun‐Han Koo, Dinithi Jayasuriya, Nethmi Jayasinghe, Wonjun Shin, Amit R. Trivedi, Hocheon Yoo   +7 more
wiley   +1 more source

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

Advanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu, Hongyi Dou, Jeremy B. Gan, Cun Li, Xuanyu Sheng, Juanjuan Lu, Abhijeet Choudhury, Jialong Huang, Yizhi Zhang, Zhongxia Shang, Ye Cao, Xinghang Zhang, Haiyan Wang   +12 more
wiley   +1 more source

Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS2–MoS2 Lateral Heterostructures

Advanced Functional Materials, EarlyView.
Surface potential distribution image, along with the derived electric field distribution across the interface, reveals that the electric field reaches its peak at the interface. Additionally, the spectral response of the heterointerface exhibits higher and broader features compared to its bare counterparts.
Pargam Vashishtha, Clara Kofler, Ajay Kumar Verma, Sindhu Priya Giridhar, Jonathan O. Tollerud, Nethmi S. L. Dissanayake, Tanish Gupta, Manoj Sehrawat, Vishnu Aggarwal, Edwin L.H. Mayes, Billy J. Murdoch, Deepak Sharma, Taimur Ahmed, Jani Kotakoski, Jeffrey A. Davis, Yuerui Lu, Govind Gupta, Irfan H. Abidi, Sumeet Walia   +18 more
wiley   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

Advanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon, Dong Ho Lee, Seyoung Oh, Jongwon Yoon, Hyo‐Bae Kim, Ji‐Hoon Ahn, Woojin Park, Han Seul Kim, Byungjin Cho   +8 more
wiley   +1 more source

Design and Applications of Multi‐Frequency Programmable Metamaterials for Adaptive Stealth

Advanced Functional Materials, EarlyView.
This article provides a comprehensive overview of metamaterials, including their fundamental principles, properties, synthesis techniques, and applications in stealth, as well as their challenges and future prospects. It covers topics that are more advanced than those typically discussed in existing review articles, while still being closely connected ...
Jonathan Tersur Orasugh, Ankita Mohanty, Amit Malakar, Suryasarathi Bose, Suprakas Sinha Ray   +4 more
wiley   +1 more source