Results 181 to 190 of about 5,592,186 (248)

Combinatorial Survey of Structural Phase Distribution and Magnetism in Fe‐Ge‐Te Composition‐Spread Thin Film Libraries

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Magnetic 2‐dimensional (2D) van der Waals (vdW) materials have garnered tremendous attention. The vdW ferromagnet Fe5Ge1Te2 has a Curie temperature Tc of ≈ 270 K, which is tailorable by tuning the stoichiometry and the Fe deficiency to reach room temperature.
Chih‐Yu Lee   +7 more
wiley   +1 more source

Balancing Injection and Short‐Channel Effects in Organic Permeable Base Transistors via Thickness Scaling

open access: yesAdvanced Electronic Materials, EarlyView.
Organic permeable base transistors are shown to benefit from balanced control of the semiconductor layers above and below the permeable base. Simulations and experiments indicate that the top semiconductor layer affects charge injection and lateral transfer length, while the bottom layer modulates the collector‐induced short‐channel effects.
Sun‐Woo Jo   +4 more
wiley   +1 more source

SMA-WSN: Failure-Aware Slime-Mold-Inspired Clustering and Per-Hop Versus End-to-End Delivery Analysis in Agricultural Wireless Sensor Networks. [PDF]

open access: yesSensors (Basel)
Belloula M   +7 more
europepmc   +1 more source

MoS2 Memristors Made by Liquid–Liquid Interface Assembly and Ultraprecise Metal Printing

open access: yesAdvanced Electronic Materials, EarlyView.
A cleanroom‐free, fully additive fabrication route combines ultraprecise printed silver electrodes with Langmuir–Schaefer‐deposited bilayer MoS2 to realize ultralow‐power resistive switching devices. The resulting microscale memories exhibit low operating voltages, a large memory window, stable retention and endurance, demonstrating a scalable and cost‐
Miguel Franco   +13 more
wiley   +1 more source

Reliable Ru‐Based CBRAM Synapses for Energy‐Efficient Neuromorphic Computing: Suppressing Filament Overgrowth and Read Noise via Ru‐Pt Alloy and AlOx Engineering

open access: yesAdvanced Electronic Materials, EarlyView.
Ru–Pt alloying suppresses filament overgrowth and an AlOx switching layer enhances reliable switching, hopping transport enables conductance tuning via hopping distance modulation, Ru7Pt3/AlOx/Pt device yields 16 low‐noise conductance states, a 2–3‐fold improvement over prior Ru‐based CBRAM, and CSNN inference on FMNIST reaches 81% accuracy with 103 ...
Sangmin Lee   +10 more
wiley   +1 more source

Investigation on the Impact of Memristive Device Variability on Uncoupled Memristive Cellular Nonlinear Networks

open access: yesAdvanced Electronic Materials, EarlyView.
Memristors, nanoscale devices that compute and store data in the same place, promise compact, energy‐efficient image‐processing hardware, yet no two devices behave exactly alike. Simulations based on real device measurements show that a 256‐cell memristive cellular nonlinear network (M‐CellNN) detects image edges perfectly despite this variability and ...
Salwa Yasmeen Neyaz   +10 more
wiley   +1 more source

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