Results 111 to 120 of about 2,688,437 (267)

Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems

Advanced Electronic Materials, EarlyView.
Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang, Weipeng Wang, Xuan Cong, Shiyu Wang, Gao Li, Sen Gong, Lin Huang, Hongxin Zeng, Yaxin Zhang, Ziqiang Yang   +9 more
wiley   +1 more source

Ferroionic Electrostatic Landscapes Enabling Wireless Energy Harvesting, Storage, and Sensing

Advanced Electronic Materials, EarlyView.
By integrating experiments and electrostatic field simulations, we show that long‐range wireless coupling in Li‐based ferroionics devices emerges from the cooperative interaction between ionic migration and electronic polarization. This coupling sustains self‐polarized electrostatic fields across centimeter‐scale air gaps without external bias or ...
M. Helena Braga, Beatriz M. Gomes, António B. Vale, Beatriz A. Maia, Ilídio B. Costa, Filipa Braz, Jorge C. Ribeiro, João C. Ribeiro   +7 more
wiley   +1 more source

BiBHNet: A Bilateral Beam Hopping Neural Network for Joint Beam Pattern and Resource Allocation in GEO Satellite Communications

IEEE Access
Geostationary Earth orbit (GEO) high-throughput satellite (HTS) systems face the challenges of non-uniform traffic distributions and inter-beam interference under limited resources.
Chenyu Wu, Yuhang Li, Guocheng Lv, Ye Jin   +3 more
doaj   +1 more source

Multi-Beam LEO Satellite Beam Hopping Framework

<h2>Multi-Beam LEO Satellite Beam Hopping Framework</h2> <p>Python code to simulate multi-beam LEO satellite communication system with different beam hopping mechanisms.</p> <p>With this Python code, the results from the ...
Fastenbauer, Agnes, Rupp, Markus, El Hadfi, Younes, Kaneko, Megumi, Svoboda, Philipp   +4 more
core   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Thermally assisted variable range hopping in Tl4S3Se crystal

, 2015
In this study, a modified model for the application of the thermionic and hopping current conduction mechanisms in the presence of continuous mixed conduction is investigated, discussed, experimented and simulated.
ZIQAN, ABDELHALIM M, MOHAMMAD, ABDULFTAH H, Hasanlı, Nızamı, QASRAWI, A F, Ziqan, Abdelhalim M., Qasrawı, Atef Fayez Hasan, Gasanly, N. M., Qasrawi, A. F., Mohammad, Abdulftah H.   +8 more
core   +1 more source

Low‐Field Giant Dielectric Tunability by Polaron‐Mediated Interfacial Polarization in Pulsed‐Laser‐Deposited‐Nanocrystalline/Amorphous Composite BaTiO3 Thin Films

Advanced Electronic Materials, EarlyView.
Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo, Taichi Murakami, Loick Pichon, Joël Leblanc‐Lavoie, Takashi Teranishi, Akira Kishimoto, Tomoaki Yamada, My Ali El Khakani   +7 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source

Amorphous Tungsten Driving Extraordinary Long‐Range Interlayer Exchange Coupling and Large Spin‐Orbit Torque

Advanced Electronic Materials, EarlyView.
The amorphous tungsten (W) is found to be a promising non‐magnetic interlayer simultaneously driving the long‐range interlayer exchange coupling and the large spin Hall effect in a synthetic antiferromagnet (SyAF). Thanks to these characteristics, efficient spin‐orbit torque switching is achieved in the SyAF.
Xueyao Hou, Keita Ito, Varun K. Kushwaha, Takumi Yamazaki, Junwei Gu, Zhenchao Wen, Keisuke Masuda, Jun Okabayashi, Shoya Sakamoto, Takeshi Seki   +9 more
wiley   +1 more source

Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO2 and on Si nanowires

Materials Research, 2013
ZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO2 thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles ...
Nadia Celeste Vega, Monica Tirado, David Comedi, Andres Rodriguez, Tomas Rodriguez, Gareth M. Hughes, Chris R. M. Grovenor, Fernando Audebert   +7 more
doaj