Results 31 to 40 of about 9,047,501 (218)

Hopping‐Mediated Zero‐Bias Photocharge Retention in Solution‐Processed Van Der Waals Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Liquid–liquid interface assembly enables the fabrication of solution‐processed MoS2 and WSe2 centimeter‐scale, nanometer‐thick type‐II heterostructures on paper. Interfacial charge separation and hopping‐limited recombination produce rectification and persistent photocharge retention at zero bias.
Aniello Pelella   +11 more
wiley   +1 more source

Photoinduced Charge Separation in Single‐Component Squaraine Films: The Key Role of Electrostatic Disorder

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Neat films of organic dyes are an interesting technological platform for solar cells and photodetectors. Recently, the conventional biphasic bulk‐heterojunction paradigm for photoinduced charge separation was challenged by the observation that charge carriers can be photogenerated in single‐component materials. A comprehensive experimental and
Davide Giavazzi   +12 more
wiley   +1 more source

Low-Complexity Reduced-Rank Adaptive Detection in Hybrid Direct-Sequence Time-Hopping Ultrawide Bandwidth Systems

open access: yes, 2009
— In this contribution reduced-rank adaptive minimum mean-square error multiuser detector (MMSE-MUD) is proposed and investi-gated for the hybrid direct-sequence time-hopping ultrawide bandwidth (DS-TH UWB) systems.
Ahmed, Qasim   +3 more
core   +1 more source

A New Strategy for Creating Quantum Light Emitters Via Post‐Growth Hydrogen‐Ion Irradiation of III‐V Nanowires

open access: yesAdvanced Functional Materials, EarlyView.
A post‐growth method is demonstrated to realize energy‐tunable quantum emitters in GaAs/GaAsN/GaAs core–multishell nanowires on a Si substrate. By combining the N‐induced bandgap reduction with H‐ion irradiation, the GaAsN potential landscape is engineered, enabling isolated, narrow emission lines that function as single‐photon sources with g(2)(0) ∼ 0.
Akant Sagar Sharma   +10 more
wiley   +1 more source

Time-Hopping Multicarrier Code-Division Multiple-Access

open access: yes, 2006
A time-hopping multicarrier code-division multiple-access (TH/MC-CDMA) scheme is proposed and investigated. In the proposed TH/MC-CDMA each information symbol is transmitted by a number of time-domain pulses with each time-domain pulse modulating a ...
Yang, L.-L., Lie-liang Yang
core   +1 more source

Engineering a Fluorinated AlPO4 Interface: Toward High Initial Coulombic Efficiency and Stable Oxygen Redox in Li‐Rich Layered Oxide Cathodes

open access: yesAdvanced Functional Materials, EarlyView.
We report a chemically incorporated fluorinated AlPO4 (AlPO4‐F) architecture that functions as a multifunctional “interfacial fortress” for Li‐rich layered oxides (LLOs). By modulating the surface potential to –32.16 mV, this architecture enriches Li+ concentration and repels detrimental electrolyte anions.
Hojun Moon   +13 more
wiley   +1 more source

Evidence for Itinerant Ferromagnetic Flat Bands Producing Large Transverse Responses

open access: yesAdvanced Materials, EarlyView.
Itinerant ferromagnetic flat bands are demonstrated in GdCo5 with a high Curie temperature of 940K, a stacked honeycomb–kagome lattice, through angle‐resolved photoemission spectroscopy and magneto‐thermoelectric measurements. These topological flat bands generate large Berry curvaturte, producing gigantic anomalous Nernst effect with record‐high ...
Susumu Minami   +15 more
wiley   +1 more source

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

open access: yesAdvanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger   +14 more
wiley   +1 more source

Production and performance of thin and thick film NTCR thermistors based on NiMn(_2)O(_4)+δ [PDF]

open access: yes, 2003
In this study reliable film type NTCR thermistors based on NiMn(_2)O(_4)+δ were produced and their electrical properties were studied in detail. Electron-beam evaporation procedures have been applied to produce thin film NTCR thermistors. Phase pure NiMn(
Schmidt, Rainer
core  

Noise‐Tunable Memristor Enabling Programmable Probabilistic Neurons for Frequency‐Selective Time‐Series Signal Encoding

open access: yesAdvanced Materials, EarlyView.
Memristors offer tunable resistance and intrinsic instability, making them promising tunable noise sources. We propose a spiking‐rate‐programmable probabilistic neuron using a Ru/TaOx/Pt memristor, where resistance‐dependent noise enables frequency‐selective encoding.
Do Hoon Kim   +8 more
wiley   +1 more source

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