Results 151 to 160 of about 87,502 (260)
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon +9 more
wiley +1 more source
Direct all-electrical decoding of vector vortex beams on chip. [PDF]
Dai M +5 more
europepmc +1 more source
Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao +4 more
wiley +1 more source
Three-Dimensional Magneto-Optical Trap Beam Delivery with Scalable Wafer-Level Optics. [PDF]
Wang Z +6 more
europepmc +1 more source
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad +3 more
wiley +1 more source
Design of polychromatic focusing optics for neutron reflectometers: rethinking REFocus optics. [PDF]
Yamada NL +3 more
europepmc +1 more source
A low‐viscosity, soft‐solvating methyl ethanoate (ME)‐based electrolyte facilitates electrolyte infiltration into dense dry‐processed ultra‐thick NCM622 cathodes while reducing Li+ desolvation barriers at Li‐metal anodes. Balanced cathode‐scale ion transport and anode‐side interfacial kinetics mitigate concentration polarization and interfacial ...
Jae Bin Park +11 more
wiley +1 more source
A chip-scale atomic beam for nonclassical light. [PDF]
Larsen BJ +6 more
europepmc +1 more source
Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig +3 more
wiley +1 more source
Holographic Projection Display Enlargement via Polarization-Grating Beam Steering with Fast-Response Liquid Crystal Pi-Cells. [PDF]
Han Q +8 more
europepmc +1 more source

