Results 171 to 180 of about 536,235 (301)

Comparative evaluation of static and dynamic 4D dose recalculations in pencil beam scanning proton therapy for oesophageal cancer. [PDF]

Phys Imaging Radiat Oncol
Carizzoni LA, Cherchik A, Li X, Lomax A, Zhang Y.   +4 more
europepmc   +1 more source

Imaging of Biphoton States: Fundamentals and Applications

Advanced Functional Materials, EarlyView.
Quantum states of two photons exhibit a rich polarization and spatial structure, which provides a fundamental resource of strongly correlated and entangled states. This review analyzes the physics of these intriguing properties and explores the various techniques and technologies available to measure them, including the state of the art of their ...
Alessio D'Errico, Ebrahim Karimi
wiley   +1 more source

Protocol for fixation and staining of postmortem human brain tissue optimized for focused ion beam-scanning electron microscopy. [PDF]

STAR Protoc
Maier MJ, Lewis DA, Freyberg Z, Glausier JR.   +3 more
europepmc   +1 more source

Quasi‐Static to Supersonic Energy Absorption of Nanoarchitected Tubulanes and Schwarzites

Advanced Functional Materials, EarlyView.
Nanoarchitected energy‐absorptive Tubulanes exhibit record energy absorption under quasi‐static conditions and exceptional inelastic energy dissipation under 750 m s−1 ballistics impact, with high performance spanning strain rates of 12 orders of magnitude.
Peter Serles, Alianna Maguire, Thomas Butruille, Jet Lem, Shuo Yang, Pedro Guerra Demingos, Sahar Choukir, Michel Haché, Boran Kumral, Katherine Jia, Charles Jia, Yu Zou, Chandra Veer Singh, Carlos M. Portela, Jun Lou, Pulickel M. Ajayan, Tobin Filleter   +16 more
wiley   +1 more source

Range-compensated pencil beam scanning proton Arc therapy: a feasibility study. [PDF]

Commun Eng
Smith BR, Flynn RT, Gutiérrez AN, Hyer DE.   +3 more
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Comparing Organs at Risk Sparing Between Intensity-Modulated Radiotherapy and Pencil-Beam Scanning Plans Based on Disease Location for Hodgkin and Non-Hodgkin Lymphoma. [PDF]

Int J Part Ther
Reiners K, Viviers E, Getman N, Kirby K, Johnson PB, Mendenhall NP, Zhang Y, Mailhot Vega RB.   +7 more
europepmc   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Novel pencil-beam scanning proton lattice radiation therapy for the treatment of bulky liver cancer: dosimetric comparison with VMAT-lattice radiotherapy. [PDF]

Front Oncol
Li Y, Martin-Paulpeter RM, Chung CV, Aguilar MA, Matias CA, Delgado A, Nair SS, Court LE, Perles L, Sahoo N, Zhu RX, Poenisch F, Flint DB, Sawakuchi GO, Beddar S, Koay E, Baker JS, Ludmir EB, Niedzielski JS.   +18 more
europepmc   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source