Results 211 to 220 of about 1,211,459 (300)

Influence mechanism of thick hard layer on fracture and energy release characteristics of composite roof. [PDF]

Sci Rep
Song XS, Wang ZQ, Zhang PF, Guo L, Zhao TB, Han GW.   +5 more
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Theoretical Analysis of Enhanced Microwave Measurement Using Structured Beams. [PDF]

Sensors (Basel)
Yin Z, Gao F, Chen T, Wang C, Lu X, Yang A, Peng Y.   +6 more
europepmc   +1 more source

Structural Design of Railway Structure with No Footing Beams

Concrete Journal, 1997
T. Hasuda, T. Furuya
openaire   +2 more sources

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Chiral orbital lasing in a twisted bilayer metasurface. [PDF]

Nat Commun
Wang M, Lv N, Zhang Z, Chen Y, Si J, Chen J, Tang C, Yin X, Liu Z, Xin D, Yi Z, Zheng W, Kivshar Y, Peng C.   +13 more
europepmc   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source

Coherent control of optical spin-orbit interactions. [PDF]

Sci Adv
Yang H, Tu K, Chen Z, Hong Y, Tang J, Zheng H, Zhong Y, Yu J, Chen Z, Zhu W.   +9 more
europepmc   +1 more source

Regiorandom Polythiophenes for Fully Stretchable Electrochemical Transistors and Logic Circuits

Advanced Functional Materials, EarlyView.
Regiorandom (RRa) polythiophenes, once regarded as unsuitable for electronics, exhibit exceptional switching performance via volumetric electrochemical doping. Optimized RRa‐based organic electrochemical transistors (OECTs) achieve a high on/off ratio (≈104), stable operation under 200% strain, and enable fully stretchable logic gates, demonstrating ...
Dong Hyun Park, Min Su Kim, Kyu Yeon Kim, Jae Hyun Han, Moon Sung Kang, Kyung Gook Cho, Keun Hyung Lee   +6 more
wiley   +1 more source

From LUXE to future colliders: probing strong-field QED and beyond. [PDF]

Eur Phys J Plus
Schulthess I.
europepmc   +1 more source