Results 211 to 220 of about 110,049 (267)

Tuning Redox Dynamics in Cu‐Based Electrocatalysts: Effect of Secondary Metals

open access: yesAdvanced Functional Materials, EarlyView.
Advanced analysis of operando X‐ray absorption spectroscopy data reveals that secondary metals affect the redox processes in Cu‐based catalysts for electrocatalytic CO2 reduction. This influences the amount of oxides formed under pulsed reaction conditions and the distribution of reaction products.
Martina Rüscher   +17 more
wiley   +1 more source

Extraordinary n‐type Tellurium‐Free Thermoelectric Performance of Y‐Doped BiSe via Synergistic Effect of Vacancies and Band Engineering

open access: yesAdvanced Functional Materials, EarlyView.
Yttrium doping in Sb‐alloyed BiSe synergistically induces Bi vacancies and flattens conduction bands, simultaneously slashing lattice thermal conductivity by 50% and boosting the power factor. The optimized n‐type Bi0.64Sb0.3Y0.06Se delivers a peak zT of 0.91 at 393 K (average zT 0.76, 300–523 K) and an 8‐pair module with 4.6% conversion efficiency ...
Wenhao Xie   +16 more
wiley   +1 more source

Giant Electrostriction in Halide Perovskites Revisited With Double‐Modulation Interferometry

open access: yesAdvanced Functional Materials, EarlyView.
A giant electrostrictive effect in lead halide perovskites had been reported previously. This work uses sensitive interferometry to measure the electromechanical response of various halide perovskite samples. The results reveal no intrinsic electrostrictive compression. Instead, the materials expand primarily under an applied electric field as a result
Philipp Ramming   +4 more
wiley   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

open access: yesAdvanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen   +5 more
wiley   +1 more source

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