Results 171 to 180 of about 4,192 (267)

Thermally Engineered Sodium‐Embedded Alumina with Programmable Synaptic Plasticity for Neuromorphic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon   +7 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

open access: yesAdvanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu   +5 more
wiley   +1 more source

Solvent‐Free Manufacturing of Multifunctional Gas Diffusion Electrode Architectures for Enhanced CO2 Conversion From Low‐Concentration Streams

open access: yesAdvanced Functional Materials, EarlyView.
A tandem gas diffusion electrode (GDE) leveraging hierarchically engineered microgranules enables efficient CO2 electroreduction under dilute CO2 conditions. A key innovation lies in the solvent‐free precision assembly of metal–organic‐frameworks, carbon nanotubes, and copper nanoparticles.
Kai‐Jen Wu   +7 more
wiley   +1 more source

Tracing chemical depletion in evolved binaries hosting second-generation transition discs. [PDF]

open access: yesMon Not R Astron Soc
Mohorian M   +6 more
europepmc   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

open access: yesAdvanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun   +8 more
wiley   +1 more source

Home - About - Disclaimer - Privacy