Results 261 to 270 of about 426,230 (326)

MALITE: Lightweight Malware Detection and Classification for Constrained Devices. [PDF]

open access: yesIEEE Trans Emerg Top Comput
Anand S   +5 more
europepmc   +1 more source

Higher‐Order Temporal Dynamics in Complementary Charge Trap Memristor for High‐Dimensional Reservoir Computing

open access: yesAdvanced Functional Materials, EarlyView.
A complementary charge‐trap memristor (CoCTM) featuring a unique current transient with tunable overshoot‐relaxation dynamics is introduced for high‐resolution reservoir computing. By leveraging higher‐order temporal dynamics from engineered trapping layers, the device generates multiple output states from a single input, forming rich, high‐dimensional
Alba Martinez   +9 more
wiley   +1 more source

Differentiating the Synergistic Interactions Between Li+ Salts and Cyclic to Linear Carbonate Ratios to Enable Wide‐Temperature Performance of Lithium‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
The coordination in carbonate solvents and degradation products of lithium difluoro(oxolato) borate (LiDFOB) salt enables sufficient passivation of both LiNi0.8Mn0.1Co0.1O2 (NMC811) cathode and graphite anode in the absence of ethylene carbonate (EC).
Thomas J. Watts   +2 more
wiley   +1 more source

Sawfish: improving long-read structural variant discovery and genotyping with local haplotype modeling. [PDF]

open access: yesBioinformatics
Saunders CT   +7 more
europepmc   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

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