Results 281 to 290 of about 426,230 (326)

Advanced Surface Engineering and Passivation Strategies of Quantum Dots for Breaking Efficiency Barrier of Clean Energy Technologies: A Comprehensive Review

open access: yesAdvanced Functional Materials, EarlyView.
This review describes the different surface engineering strategies for quantum dots that addresses the challenges associated with surface defects, highlighting their role in enhancing the performance of solar energy conversion technologies. Abstract Colloidal quantum dots (QDs) have garnered significant attention for their unique potential in clean ...
Kokilavani S., Gurpreet Singh Selopal
wiley   +1 more source

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu   +12 more
wiley   +1 more source

The enduring advantages of the SLOW5 file format for raw nanopore sequencing data. [PDF]

open access: yesGigascience
Gamaarachchi H   +4 more
europepmc   +1 more source

Direct Evidence of Topological Dirac Fermions in a Low Carrier Density Correlated 5d Oxide

open access: yesAdvanced Functional Materials, EarlyView.
The 5d oxide BiRe2O6 is discovered as a low‐carrier‐density topological semimetal hosting symmetry‐protected Dirac fermions stabilized by nonsymmorphic symmetries. Angle‐resolved photoemission spectroscopy, quantum oscillations, and magnetotransport measurements reveal gapless Dirac cones, quasi‐2D Fermi surfaces, high carrier mobility, and a field ...
Premakumar Yanda   +11 more
wiley   +1 more source

Enhanced Performance and In Situ TEM Investigation in High Entropy Alloy Electrode Based Memristors

open access: yesAdvanced Functional Materials, EarlyView.
This study utilizes in situ TEM, EDS, EELS, and APT to reveal switching in HEA/ZnO/Nb:STO RRAM. High diffusivity of Mn lowers the SET voltage to 1.5 V. Cr stabilizes the oxygen layer, while Fe, Co, and Ni stabilize the electrode. Based on these observations, the device achieves 30 ns switching, a 10⁷ memory window, and excellent endurance, being ...
Jing‐Yuan Tsai   +10 more
wiley   +1 more source

Agptools: a utility suite for editing genome assemblies. [PDF]

open access: yesBioinformatics
Ricemeyer ES, Carroll RA, Warren WC.
europepmc   +1 more source

Home - About - Disclaimer - Privacy