Results 161 to 170 of about 637,766 (337)

Towards High‐Acuity Vision Restoration: Hybrid Retinal Prosthesis Composed of a High‐Density Multielectrode Array Integrated With Glutamatergic Cells

open access: yesAdvanced Functional Materials, EarlyView.
This work introduces a novel Hybrid Retinal Implant (HRI), composed of a high‐density electrode array integrated with glutamatergic neurons to overcome key limitations of current retinal prostheses. The significant reduction of activation threshold and of electrode cross‐talk yields in an improved spatial resolution.
Nairouz Farah   +8 more
wiley   +1 more source

Advanced Surface Engineering and Passivation Strategies of Quantum Dots for Breaking Efficiency Barrier of Clean Energy Technologies: A Comprehensive Review

open access: yesAdvanced Functional Materials, EarlyView.
This review describes the different surface engineering strategies for quantum dots that addresses the challenges associated with surface defects, highlighting their role in enhancing the performance of solar energy conversion technologies. Abstract Colloidal quantum dots (QDs) have garnered significant attention for their unique potential in clean ...
Kokilavani S., Gurpreet Singh Selopal
wiley   +1 more source

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu   +12 more
wiley   +1 more source

Thermophysical properties of working fluids for binary geothermal cycles

open access: bronze, 1985
Dwain E. Diller   +8 more
openalex   +1 more source

Enhanced Performance and In Situ TEM Investigation in High Entropy Alloy Electrode Based Memristors

open access: yesAdvanced Functional Materials, EarlyView.
This study utilizes in situ TEM, EDS, EELS, and APT to reveal switching in HEA/ZnO/Nb:STO RRAM. High diffusivity of Mn lowers the SET voltage to 1.5 V. Cr stabilizes the oxygen layer, while Fe, Co, and Ni stabilize the electrode. Based on these observations, the device achieves 30 ns switching, a 10⁷ memory window, and excellent endurance, being ...
Jing‐Yuan Tsai   +10 more
wiley   +1 more source

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