Results 201 to 210 of about 2,170,347 (337)
A complementary charge‐trap memristor (CoCTM) featuring a unique current transient with tunable overshoot‐relaxation dynamics is introduced for high‐resolution reservoir computing. By leveraging higher‐order temporal dynamics from engineered trapping layers, the device generates multiple output states from a single input, forming rich, high‐dimensional
Alba Martinez +9 more
wiley +1 more source
The coordination in carbonate solvents and degradation products of lithium difluoro(oxolato) borate (LiDFOB) salt enables sufficient passivation of both LiNi0.8Mn0.1Co0.1O2 (NMC811) cathode and graphite anode in the absence of ethylene carbonate (EC).
Thomas J. Watts +2 more
wiley +1 more source
Acceleration of butane vapor nucleation by carbon dioxide gas.
Choudhury A +7 more
europepmc +1 more source
Making metallic glass design more intelligent by material networks. [PDF]
Shen J.
europepmc +1 more source
A Markov Process on Binary Numbers
openaire +2 more sources
Remarks on the approximation for the number of rooted unordered binary trees [PDF]
László Kovács
openalex +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source

