Results 241 to 250 of about 12,102,780 (375)

Modelling Thermal Halide Exchange of Perovskite Powders With and Without BMIMBF4 From an Interdiffusion Perspective

open access: yesAdvanced Functional Materials, EarlyView.
Halide diffusion limits the stability of hybrid halide perovskites for optoelectronic applications and thus needs to be quantified. This study presents an effective interdiffusion model to obtain time‐dependent diffusion coefficients for I− and Br− diffusion from in situ X‐ray diffraction data during the formation of a solid solution MAPbIxBr3‐x from ...
Tobias Siegert   +6 more
wiley   +1 more source

Higher‐Order Temporal Dynamics in Complementary Charge Trap Memristor for High‐Dimensional Reservoir Computing

open access: yesAdvanced Functional Materials, EarlyView.
A complementary charge‐trap memristor (CoCTM) featuring a unique current transient with tunable overshoot‐relaxation dynamics is introduced for high‐resolution reservoir computing. By leveraging higher‐order temporal dynamics from engineered trapping layers, the device generates multiple output states from a single input, forming rich, high‐dimensional
Alba Martinez   +9 more
wiley   +1 more source

Differentiating the Synergistic Interactions Between Li+ Salts and Cyclic to Linear Carbonate Ratios to Enable Wide‐Temperature Performance of Lithium‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
The coordination in carbonate solvents and degradation products of lithium difluoro(oxolato) borate (LiDFOB) salt enables sufficient passivation of both LiNi0.8Mn0.1Co0.1O2 (NMC811) cathode and graphite anode in the absence of ethylene carbonate (EC).
Thomas J. Watts   +2 more
wiley   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

Selective and Precise Editing of Digital Polymers Through Parallel or Series Toehold‐Mediated Strand Displacement

open access: yesAdvanced Functional Materials, EarlyView.
A sequence‐encoded supramolecular construct containing two accessible toeholds is developed herein for enabling multiple editing operations. By introducing specific input strands, it is possible to selectively erase or rewrite digital content through parallel or series toehold‐mediated strand displacement (PTMSD or STMSD).
Jakub Ossowski   +3 more
wiley   +1 more source

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