Results 131 to 140 of about 9,339 (291)

Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence

Advanced Science, EarlyView.
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu, Tao Han, Jiahui Ding, Hong Lian, Lingling Yao, Zhaoxin Xu, Xingyu Zhang, Shuanglong Wang, Jiangnan Xia, Tianchi Zhang, Weiwei Kang, Qingchen Dong   +11 more
wiley   +1 more source

Development of a bipolar space charge-limited current problem for metal-insulator-metal system. Some numerical results [PDF]

, 2008
A solid in which the trapped negative charge can become mobile or immobile is considered. The different contact processes for a bipolar space charge transport are taken into account.
Swistacz, B
core   +1 more source

A Combined FEM-CFD Method for Investigating Transport Properties of Compressed Porous Electrodes in PEMFC: A Microstructure Perspective

Energies
Hydrogen energy is vital for a clean, low-carbon society, and proton exchange membrane fuel cells (PEMFCs) represent a core technology for the conversion of hydrogen chemical energy into electrical energy.
Zhuo Zhang, Ruiyuan Zhang, Xiuli Zhang, Zhiyi Tang, Zixing Wang, Yang Wang, Yanjun Dai, Li Chen, Wenquan Tao   +8 more
doaj   +1 more source

Tuning of Charge Balance in Bipolar Host Materials for Highly Efficient Solution-Processed Phosphorescent Devices

, 2016
A novel bipolar host material, which meets the requirements of high triplet energy, good charge carrier transport properties, high solubility, and film-forming ability at the same time, has been designed and synthesized.
Yong Qiu (83780), Juan Qiao (1413826), Guifang Dong (1706812), Liduo Wang (1548013), Lian Duan (110648), Wei Jiang (14986)   +5 more
core   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Ferroelectric Behavior of Micro‐ to Submicron‐Scale HZO Capacitors: Impact of the Perimeter‐to‐Area Ratio

Advanced Electronic Materials, EarlyView.
Using C‐AFM, W/HZO/p‐Ge capacitors with areas down to 0.26 µm2 are investigated. Frequency‐dependent voltage ramps reveal switching currents that confirm complete polarization reversal across the entire electrode area, while PUND enables reconstruction of P–V loops.
Lucian Trupina, Stefan Neatu, Lucian Pintilie, Lucia Nicoleta Leonat, Stavros Kitsios, Stefania Skorda, Alexandros El Sachat, Polychronis Tsipas, Alexander Flasby, Laura Bégon‐Lours, Athanasios Dimoulas   +10 more
wiley   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

Space charge limited degradation of bipolar oxides at low electric-fields [PDF]

, 1998
Radiation-induced degradation of many types of bipolar transistors and circuits is more severe following low dose rate exposure than following high dose rate exposure.
Lacoe, R. C., Witczak, S. C., Fleetwood, D. M., Mayer, D. C., Schrimpf, R. D., Galloway, K. F.   +5 more
core  

Illuminating the Intracellular World: Breakthroughs in Nanoscale Optoelectronics

Advanced Electronic Materials, EarlyView.
This perspective explores optoelectronic biointerfaces spanning macroscale flexible devices to nanoscale intracellular systems, emphasizing their integration across dimensions. It examines capacitive, Faradaic, and photothermal mechanisms that enable light‐driven control of cellular activity and highlights key material and design challenges in ...
Tania Assaf, Menahem Y. Rotenberg
wiley   +1 more source