Results 261 to 270 of about 56,348 (299)
Some of the next articles are maybe not open access.
Mechanisms of charge carriers nonequilibrium in transport processes in bipolar semiconductors
Current Applied Physics, 2016Abstract The interplay between physical origins of the nonequilibrium and their influence on the linear steady state transport processes in bipolar semiconductors are under investigation. Particular attention is paid to the influence of the energy nonequilibrium on the generation-recombination processes under various conditions.
I.N. Volovichev, Yu.G. Gurevich
openaire +1 more source
A unified analytical model for charge transport in Heterojunction Bipolar Transistors
Solid-State Electronics, 2004Abstract A unified analytical charge transport model of HBTs, which is applicable for a wide variety of emitter-base (e–b) structures of HBTs, viz. abrupt or graded heterojunctions and p–n junctions displaced into wider or narrower band gap material is proposed.
K Venkateswara Reddy, Amitava DasGupta
openaire +1 more source
Bipolar Charge Transport in PCPDTBT‐PCBM Bulk‐Heterojunctions for Photovoltaic Applications
Advanced Functional Materials, 2008AbstractAn experimental study of the transport properties of a low‐bandgap conjugated polymer giving high photovoltaic quantum efficiencies in the near infrared spectral region (Eg‐opt ∼ 1.35 eV) is presented. Using a organic thin film transistor geometry, we demonstrate a relatively high in‐plane hole mobility, up to 1.5 · × 10−2 cm2 V−1 s−1 and ...
Mauro Morana +9 more
openaire +1 more source
Effect of injection barrier height on charge transport under bipolar injection
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2018AbstractIn this paper, a numerical model describing the transient phenomena of electric charge in a dielectric because of a double injection at 2 electrodes is proposed. The mathematical model and the methods for its resolution are presented step by step.
Nadia Meftali +3 more
openaire +1 more source
Simulation of space charge behavior in LDPE with a modified of bipolar charge transport model
Proceedings of 2014 International Symposium on Electrical Insulating Materials, 2014In this paper, an simply ion charge transport model is proposed, compared with bipolar charge transport model. It consists of ion generation by field assisted dissociation of impurities, transport, trapping and recombination in polymer. To simplify the model, it is assumed that only one type of impurity existing in polymer.
null Jiandong Wu +3 more
openaire +1 more source
Bipolar charge transport in a robust hexacoordinate organosilane
Journal of Organometallic Chemistry, 2022Adam W. Earnhardt +11 more
openaire +1 more source
IEEE Transactions on Dielectrics and Electrical Insulation, 2012
To evaluate spacecraft charging level and predict surface and internal electrostatic discharging (ESD) probability, it is important to know the charge transport properties of high insulation materials, such as epoxy resin/glass composition (FR4), Teflon and polyimide. In present work, the charge transport properties of the space insulators are revealed
null Daomin Min +3 more
openaire +1 more source
To evaluate spacecraft charging level and predict surface and internal electrostatic discharging (ESD) probability, it is important to know the charge transport properties of high insulation materials, such as epoxy resin/glass composition (FR4), Teflon and polyimide. In present work, the charge transport properties of the space insulators are revealed
null Daomin Min +3 more
openaire +1 more source
Bipolar charge transport and contact phenomena in Al2O3
Thin Solid Films, 2023Yu.N. Novikov +4 more
openaire +1 more source
Charge Transport Phenomena in Cryogenic SiGe Heterojunction Bipolar Transistors
Silicon-germanium heterojunction bipolar transistors (HBTs) are widely used for high-speed communications and radar systems owing to the their low-cost and competitive performance relative to III-V compound semiconductor devices. Due to the higher cost and lower yield of III-V high electron mobility transistors (HEMTs) based on InGaAs quantum wells ...openaire +1 more source
ACS Applied Materials & Interfaces
This work reports the synthesis of a series of bipolar host polymers, specifically PPPIC-co-PPDPT (9:1), PPPIC-co-PPDPT (8:2), and PPPIC-co-PPDPT (7:3), which incorporate a hole-transporting unit, 7,7-dimethyl-5-phenyl-2-(4-vinylphenyl)-5,7-dihydroindeno[2,1-b]carbazole (PPIC), and an electron-transporting unit, 2,4-diphenyl-6-(4-vinylphenoxy)-1,3,5 ...
Nargis Ali +5 more
openaire +2 more sources
This work reports the synthesis of a series of bipolar host polymers, specifically PPPIC-co-PPDPT (9:1), PPPIC-co-PPDPT (8:2), and PPPIC-co-PPDPT (7:3), which incorporate a hole-transporting unit, 7,7-dimethyl-5-phenyl-2-(4-vinylphenyl)-5,7-dihydroindeno[2,1-b]carbazole (PPIC), and an electron-transporting unit, 2,4-diphenyl-6-(4-vinylphenoxy)-1,3,5 ...
Nargis Ali +5 more
openaire +2 more sources

