Results 71 to 80 of about 56,348 (299)

Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions [PDF]

, 2001
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic effect, spin valve ...
B. T. Jonker, I. Žutić, I. Žutić, Igor Žutić, J.-E. Wegrowe, Jaroslav Fabian, M. E. Flatte, M. Johnson, P. R. Hammar, R. Fiederling, S. Das Sarma, S. Das Sarma, S. Das Sarma, S. Das Sarma, S. Datta, S. Tiwari, T. Dietl, Y. Ohno   +17 more
core   +2 more sources

A Modified Algorithm for the Simulation of Charge Behavior in Water Tree Aged Cross-Linked Polyethylene Cable

IEEE Access, 2018
In this paper, a modified algorithm is introduced to explain the process of charge formation in water tree aged cable insulation with respect to the dielectric properties of water tree areas and the cylindrical geometries of cable insulation.
Yu Zhang, Deyuan Liu, Jiandong Wu, Yi Yin   +3 more
doaj   +1 more source

Bipolar Monte Carlo Simulation of Hot Carriers In III-N LEDs [PDF]

, 2015
We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer.
Georgiev, Vihar, Kivisaari, Pyry, Li, Jingrui, Oksanen, Jani, Rinke, Patrick, Sadi, Toufik, Tulkki, Jukka   +6 more
core   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source

Simulation of Bipolar Charge Transport in Graphene by Using a Discontinuous Galerkin Method [PDF]

Communications in Computational Physics, 2019
Summary: Charge transport in suspended monolayer graphene is simulated by a numerical deterministic approach, based on a discontinuous Galerkin (DG) method, for solving the semiclassical Boltzmann equation for electrons. Both the conduction and valence bands are included and the interband scatterings are taken into account.
Armando Majorana, Giovanni Nastasi, Vittorio Romano   +2 more
openaire   +2 more sources

Theoretical study of the influence of the morphology in polymer-based devices functioning [PDF]

, 2009
It is well known that the morphology of polymer-based optoelectronic devices can influence their efficiency, since the ways that polymer chains pack inside the active layer can influence not only the charge transport but also the optic properties of the ...
A.M. Almeida, A.M. Stoneham, A.M. Stoneham, B.G. Sumpter, C.Y. Yang, H.F. Meng, Hélder M. C. Barbosa, J. Kim, K. Koynov, M.M.D Ramos, M.M.D. Ramos, M.M.D. Ramos, Marta M. D. Ramos, P.W.M. Blom   +13 more
core   +1 more source

s‐Orbital Mediated Metavalent Bonding Enables State‐Of‐The‐Art n‐Type AgBiSe2 Thermoelectrics

Advanced Functional Materials, EarlyView.
Metavalent bonding (MVB) underpins the exceptional property portfolio of chalcogenides. Typical MVB solids are mainly found in p‐bonded systems. This work reveals that MVB can also be formed with s‐p orbital interactions upon forming a single‐electron σ‐bond, as exemplified in AgBiSe2.
Binrong Huang, Dasol Kim, Yuan Yu, Jinxuan Zhong, Jianbo Zhu, Yaoling Shen, Yu Guo, Moran Wang, Jiawei Huang, Tu Lyu, Nan Lin, Yongsheng Zhang, Matthias Wuttig, Lipeng Hu   +13 more
wiley   +1 more source

Bipolar-Driven Large Magnetoresistance in Silicon

, 2013
Large linear magnetoresistance (MR) in electron-injected p-type silicon at very low magnetic field is observed experimentally at room temperature. The large linear MR is induced in electron-dominated space-charge transport regime, where the magnetic ...
A. B. Pippard, E. I. Karakushan, Eiji Shikoh, M. A. Lampert, Masashi Shiraishi, Michael P. Delmo, N. W. Ashcroft, R. S. Popovic, S. M. Sze, Teruya Shinjo   +9 more
core   +1 more source

How ligands affect resistive switching in solution-processed HfO2 nanoparticle assemblies [PDF]

, 2018
Advancement of resistive random access memory (ReRAM) requires fully understanding the various complex, defect-mediated transport mechanisms to further improve performance.
Wang, Jiaying, Choudhary, Satyan, De Roo, Jonathan, De Keukeleere, Katrien, Van Driessche, Isabel, Crosby, Alfred J, Nonnenmann, Stephen S   +6 more
core   +2 more sources

Electro‐Chemo‐Mechanical Coupling in Hf0.5Zr0.5O2 Ferroionic Heterostructures

Advanced Functional Materials, EarlyView.
Schematic of a ferroionic HZO heterostructure where epitaxial interfaces enable dynamic oxygen‐vacancy exchange, coupling ionic and ferroelectric degrees of freedom. Vacancy‐mediated polarization modulation biases HZO polymorphism, suppresses leakage, and enhances piezoelectric response, yielding distinct butterfly‐loop evolution and diode‐like ...
Achilles Bergne, Denis Alikin, Milica Vasiljevic, Victor B. Tinti, Javier Zamudio‐García, Leonardo Soares de Oliveira, Megan Landberg, Dimitrios Koukoulis, Huaiyu Chen, Jesper Wallentin, David Marrero‐López, Astri Bjørnetun Haugen, Sizhao Huang, Dennis Christensen, Nini Pryds, Alexander Tselev, Andrei Kholkin, Vincenzo Esposito   +17 more
wiley   +1 more source