Results 141 to 150 of about 16,417,442 (254)

Heterojunction Engineering of Electrodes and Membranes in Redox Flow Batteries. [PDF]

Chem Rec
Dan X, Li Z, Chen M, Hou X, Luo Y, Zhuo L, Liu W, Feng L, Liu X.   +8 more
europepmc   +1 more source

A Bio‐Inspired Visual Sensor With UV‐to‐NIR Fusion for Enhanced Recognition in Autonomous Driving Systems

Advanced Science, EarlyView.
Inspired by the sophisticated multilayer retinal architecture found in Pacific salmon eyes, a novel van der Waals heterojunction sensor based on NbNiTe5/BP is designed. Upon illumination at distinct wavelengths of 365 and 820 nm, the device exhibits distinctive bipolar photocurrent responses with opposite polarities. This unique optoelectronic behavior
Tianle Zeng, Zishen Zhao, Keqin Tang, Yawen Luo, Junxin Yan, Kun Ye, Jinlu Liu, Zhuo Dong, Zhipeng Yu, Weiming Lv, Ruicheng Li, Yenasheng Li, Lixuan Liu, Tianyu Xue, Chun Zhao, Yan Zhou, Kai Zhang, Zhongming Zeng, Zhongyuan Liu   +18 more
wiley   +1 more source

Performance Enhancement of Proton Exchange Membrane Fuel Cell Through Synergistic Design of Optimized Gas Diffusion Layer Porosity Distribution and Sinusoidal Flow Field. [PDF]

ACS Omega
Huang J, Tang Z, Yang K, Deng S, Jin Z, Xu B, Wang S, Wang D, Jiang R.   +8 more
europepmc   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Bipolar Covalent Organic Frameworks Crafting Core-Shell Heterostructured Cathode for High-Performance Lithium-Organic Batteries. [PDF]

Adv Sci (Weinh)
Jiang Y, Jiang N, Dou Y, Chen Z, Zhu Y, Chen L, Yang Y.   +6 more
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Modulating intermolecular interactions and high-order triplet states of anthracene host materials for efficient TTA-UC with a Naphtho[2,3-<i>d</i>][1,3,2]diazaborole scaffold and its <i>N</i>-substituents. [PDF]

Chem Sci
Pei J, Zhang B, Li Y, Hao C, Chen Y, Jia Q, Dong H, Jiao B, Wu Z, Wang D.   +9 more
europepmc   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

Charge-Trapping-Enhanced Resistive Switching and Charge Storage in Silk Fibroin-TiO₂ Composite Memristors. [PDF]

Micromachines (Basel)
Song S, Park J, Cho J, Tak S, Kim T, Min K, Lee SN.   +6 more
europepmc   +1 more source

Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation

Advanced Electronic Materials, EarlyView.
A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang, Nellie Laleni, Sina Ranjbar, Andreas Tsiougkos, Nandakishor Yadav, Vasilis Pavlidis, Thomas Kämpfe   +6 more
wiley   +1 more source