Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
Advanced Electronic Materials, EarlyView.This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu +4 more
wiley +1 more source
The genetic association between bipolar disorder and dementia: a qualitative review
Frontiers in PsychiatryBipolar disorder is a chronic disorder characterized by fluctuations in mood state and energy and recurrent episodes of mania/hypomania and depression. Bipolar disorder may be regarded as a neuro-progressive disorder in which repeated mood episodes may ...
Hirofumi Hirakawa, Takeshi Terao
doaj +1 more source
Common polygenic variation contributes to risk of schizophrenia and bipolar disorder
Nature, 2009 S. Purcell +6 more
semanticscholar +1 more source
Frequency of bipolar spectrum disorders in those who are managing as a case of anxiety disorder in outpatient clinics of Isfahan (Iran) [PDF]
, 2012 Background and aims: Recent evidence showed significant rate of anxiety co-morbidity in patients with a diagnosed bipolar disorder. In this research we tried to study the rate of bipolar spectrum disorder (soft bipolarity) in those who are treating with ...
Kheirabadi, Gholamreza. +3 more
core
Advanced Electronic Materials, EarlyView.Low‐dimensional 7‐methyquinolinium iodobismuthate on a silicon substrate with one input and 15 output gold electrodes as a physical reservoir devices is applied, for MNIST digit classification with 82.26% accuracy and voice classification for digit 2 for six different people with 82 % accuracy.
Gisya Abdi +7 more
wiley +1 more source
No Evidence for Significant Linkage between Bipolar Affective Disorder and Chromosome 18 Pericentromeric Markers in a Large Series of Multiplex Extended Pedigrees [PDF]
, 1998 James A. Knowles +13 more
openalex +1 more source
Thermally Conductive Buried Aluminum Nitride for Next Generation Silicon‐on‐Insulator
Advanced Electronic Materials, EarlyView.Aluminum nitride (AlN) is proposed as buried insulating layer for next‐generation silicon‐on‐insulator (SOI) substrates. This work explores sputtering, atomic layer deposition (ALD), and metalorganic vapour phase epitaxy (MOVPE) AlN film to realize an AlN‐SOI platform.
Josef Stevanus Matondang +3 more
wiley +1 more source
Genetic refinement and physical mapping of a chromosome 18q candidate region for bipolar disorder [PDF]
, 1999 Geert R. Verheyen +6 more
openalex +1 more source
Advances in MXene‐Based Electronics via Surface and Structural Redesigning and Beyond
Advanced Electronic Materials, EarlyView.Herein, various MXenes surface and structural engineering strategies such as termination control, doping, interlayer design, and heterostructures are reviewed for advanced electronics applications. We discuss how these approaches optimize conductivity, work function, and device integration, enabling breakthroughs in transistors, photodetectors, and ...
Adnan Younis +8 more
wiley +1 more source
Implementing a Community Bipolar Screening Questionnaire in VT [PDF]
, 2017 The National Institute of Mental Health estimates the number of adults with a diagnosed mental disorder is nearly 1 in 5, this equates to about 43 million Americans. The national shortage of psychiatrists has hit Vermont particularly hard. There has been
Cooper, Suven
core +1 more source