Results 121 to 130 of about 160,987 (295)
Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley +1 more source
Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu +7 more
wiley +1 more source
Defects in the Compound Bi2te3 Caused by Irradiation with Protons [PDF]
Defects in single crystals of bismuth telluride caused by proton ...
Bever, M. B., Chaudhari, P.
core +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Uniform bismuth nanospheres were successfully prepared from bismuth nitrate in the presence of poly(N-vinyl-2-pyrrolidone) (PVP) by solvothermal process.
Yang Hai-Jian +4 more
doaj
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong +6 more
wiley +1 more source
The underpotential deposition (UPD) processes of lead and bismuth on bismuth telluride (Bi2Te3) have been discovered with the underpotential shifts 0.3 V for Pb UPD and 0.1 V for Bi UPD.
Aliaksei S. Bakavets +3 more
doaj
Dimeric bismuth(III) complexes bearing bis(aryl-imino)acenaphthene (Aryl-BIAN) donor ligands of the general formulae [(Dipp-BIAN)BiCl3]2 2, [(o-iPr-BIAN)BiCl3]2 3, and [(p-iPr-BIAN)BiCl3]2 4, where Dipp = diisopropyl, o-iPr = ortho-isopropyl and p-iPr ...
Beatriz P. Machado +3 more
doaj +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Effect of Bismuth Content and Heating Rate on MnS Inclusions in Free-Cutting Steel
In this paper, the influence of bismuth content and heating rate on the morphology of MnS inclusions in bismuth-containing free-cutting steel during heating was investigated through in situ observation experiments and 3D electrolytic corrosion ...
Chunlu Xie +6 more
doaj +1 more source

