Results 161 to 170 of about 8,395 (219)

Chemical bonding in bismuth telluride

Journal of Physics and Chemistry of Solids, 1958
Abstract A model for the chemical bondins in bismuth telluride is proposed which appears to dispose of some of the difficulties involved in earlier models. The new model is used to explain some of the properties of bismuth telluride and of its alloys with bismuth selenide.
J.R. Drabble, C.H.L. Goodman
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Single Crystal Bismuth Telluride

Proceedings of the Physical Society. Section B, 1956
Bismuth telluride has been investigated because of its promise as a material for thermo-electric applications. Attempts have been made to grow single crystals of the material by the Stockbarger method, by directional freezing in a horizontal boat, and by pulling from the melt.
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Studies on Nanocrystalline Bismuth Telluride

AIP Conference Proceedings, 2010
Nanostructured thermoelectric bismuth telluride powders with various hydrothermal synthesis times were synthesised to give an experimental comprehension on the formation of the nanopowders. Nanoparticles were synthesised at 130 °C for 24 h and 72 h.
Amitava Ghatak, P. K. Giri, D. K. Goswami, A. Perumal, A. Chattopadhyay   +4 more
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Bismuth tellurides as gold scavengers

2005
Bi-Te melts have potential as Au scavengers in different types of gold deposits. Using phase equilibria, we define ‘melt-(precipitation) windows’ within which the Bi-Te scavenging mechanism can operate. Predicted assemblages correlate well with those in natural samples and can be applied in other cases to explain the distribution of telluride minerals ...
Cristiana L. Ciobanu, Nigel. J. Cook, Allan Pring   +2 more
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Heat Conduction in Bismuth Telluride

Proceedings of the Physical Society, 1958
The Lorenz number of the semiconductor Bi2Te3 has been evaluated, for the range of partial degeneracy, from data provided by the measurements of electrical conductivity and thermoelectric power. The calculated electronic component of the thermal conductivity, for p-type material, has been found to agree with the experimental results, assuming the ...
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THE BISMUTH TELLURIDE-BISMUTH SELENIDE SYSTEM

1966
Abstract : These data sheets present a compilation of a wide range of electronic properties for the bismuth telluride-bismuth selenide system. Electrical properties include conductivity, dielectric constant, Hall coefficient, and mobility. Emission data were broken down into the varied electron and photon emissions which result from application of ...
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Electrical Properties of Bismuth Telluride Doped with Bismuth Iodide

Physica Status Solidi (a), 1989
Electrical conductivity and Hall coefficient of single crystals of Bi2Te3 doped with 3 wt% Bil3 are measured in thetemperature range 100 to 450 K. The concentrations of holes and electrons, their mobilities and activation energies are calculated without using any extrapolated value of temperature variation of conductivity.
S. Biswas, R. Bhattacharya
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Electrodeposition Characteristics of Bismuth-Telluride Films

MRS Proceedings, 2004
ABSTRACTThis work is a part of an on-going research effort to develop an array of micro thermoelectric coolers (TECs) for highly localized control of temperature at the cellular level. Prefabrication experimentation and modeling were carried out to understand the behavior of the proposed device.
A. Prabhakar, E. J. Podlaha-Murphy, M. C. Murphy, R. V. Devireddy   +3 more
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Transport properties of indium-alloyed and indium telluride nanostructured bismuth telluride

Physical Chemistry Chemical Physics
Natural endotaxial In2Te3 precipitates are formed within an n-type Bi2Te3 matrix with suppressed lattice thermal conductivity. The impact of simultaneous In alloying in Bi2Te3 is also evaluated via the effective mass model.
Hyun-Sik Kim, Nicholas A. Heinz, Zachary M. Gibbs, Junsu Kim, G. Jeffrey Snyder   +4 more
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Thermoelectric Nanowires Based on Bismuth Telluride

Materials Today: Proceedings, 2015
Bismuth antimony telluride (BixSb2-xTe3) and bismuth tellurium selenide (Bi2Te3-xSex) nanowires, witha 60nmdiameter, have been potentiostatically electrodeposited from perchloric baths using anodic alumina membrane. For n-type nanowires, gradual selenium concentration studies have established which one gives the closest stoichiometry to Bi2Te2.7Se0.3 ...
Khedim, M. Ben, Cagnon, L., Serradeil, V., Fournier, T., Bourgault, Daniel   +4 more
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