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, 2021 Bismuth telluride (Bi2Te3) is the most mature thermoelectric material that has been well commercialized for electronic cooling and has gradually been used for power generation using low- and medium-temperature waste heat. In the last decade, extensive efforts have been devoted to its performance enhancement, which attracts interests from both academia ...
Pan, Y., Li, J.
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Intercalation and Solution Processing of Bismuth Telluride and Bismuth Selenide
Advanced Materials, 2001Richard B Kaner
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On the solid solutions of bismuth telluride and bismuth selenide
Solid State Communications, 1964The heats of formation at 0°C of various solid solutions in the system Bi2Te3−xSex(0 < x < 3) have been measured by liquid metal solution calorimetry with bismuth as solvent. Slowly cooled and quenched alloys near the composition Bi2Te2Se had different heats of formation; the difference is interpreted as the energy of an order-disorder transition.
S. Misra, M.B. Bever
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A novel route to nanostructured bismuth telluride films by electrodeposition [PDF]
Electrochemistry Communications, 2017 We report a novel route to the fabrication of 3D nanostructured stoichiometric bismuth telluride (Bi2Te3) films by electrodeposition through inverse lipid cubic phases as evidenced by Small-angle X-ray Scattering (SAXS) and Helium Ion Microscopy (HIM ...
M Burton +2 more
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Thermal expansion of bismuth telluride
High Temperature, 2011The results of X-ray and dilatometric measurements of the thermal expansion of bismuth telluride in the temperature range of 4.2–850 K have been critically analyzed. The joint statistical processing of the experimental data has been performed by the least squares method and the most reliable temperature dependences of the linear thermal expansion ...
L. M. Pavlova +2 more
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2017
BiTe modules are the pioneers of thermoelectric (TE) modules that are available on the market and being sold annually in large quantities. BiTe modules have the unique advantage of being most efficient for applications within the temperature regime where the hot side can reach a maximum temperature of up to 250 °C.
Pham Hoang Ngan, Nini Pryds, Li Han
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BiTe modules are the pioneers of thermoelectric (TE) modules that are available on the market and being sold annually in large quantities. BiTe modules have the unique advantage of being most efficient for applications within the temperature regime where the hot side can reach a maximum temperature of up to 250 °C.
Pham Hoang Ngan, Nini Pryds, Li Han
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Journal of Applied Physics, 1987
By optimizing the growth conditions and doping with Bi, we have produced epitaxial layers of SnTe with hole concentration as low as 2.6×1018 cm−3. This is more than an order of magnitude less than the smallest carrier concentration reported for undoped bulk crystals (even with heat treatment to reduce the metal vacancy concentration). The hole mobility
M. A. Tamor +4 more
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By optimizing the growth conditions and doping with Bi, we have produced epitaxial layers of SnTe with hole concentration as low as 2.6×1018 cm−3. This is more than an order of magnitude less than the smallest carrier concentration reported for undoped bulk crystals (even with heat treatment to reduce the metal vacancy concentration). The hole mobility
M. A. Tamor +4 more
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Chemical bonding in bismuth telluride
Journal of Physics and Chemistry of Solids, 1958Abstract A model for the chemical bondins in bismuth telluride is proposed which appears to dispose of some of the difficulties involved in earlier models. The new model is used to explain some of the properties of bismuth telluride and of its alloys with bismuth selenide.
J.R. Drabble, C.H.L. Goodman
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The performance of bismuth telluride thermojunctions
British Journal of Applied Physics, 1958The thermoelectric properties of n-type and p-type bismuth telluride between 150 and 300° K have been measured and the figure of merit for thermoelectric applications has been calculated. This figure of merit has been shown to be highest for material with an electrical conductivity of about 1000 Ω-1 cm-1 with current flow parallel to the cleavage ...
H J Goldsmid, A R Sheard, D A Wright
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