Results 161 to 170 of about 40,697 (262)

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

Advanced Electronic Materials, EarlyView.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci, P. Mannocci, M. Porzani, D. Bridarolli, F. Carletti, M. Farronato, D. Ielmini   +6 more
wiley   +1 more source

Advanced receiver design for AF-FD cooperative schemes. [PDF]

Sci Rep
Al-Hattab M, Mostafa H, Marey M.
europepmc   +1 more source

Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors

Advanced Electronic Materials, EarlyView.
MoS2 memristors typically use evaporated noble metal electrodes. This study compares Pd, Ni, and Al electrodes and sputtered versus evaporated deposition. Pd is passive, while Ni damages MoS2, yielding poor switching. Sputtered Al enables reproducible ECM‐type switching with 95% yield, whereas evaporated Al forms an interfacial oxide that suppresses ...
Dennis Braun, Jing Liu, Vasilis A. Maroufidis, Hleb Fiadziushkin, Lukas Völkel, Jimin Lee, Sofía Cruces, Annika Grundmann, Ke Ran, Thorsten Wahlbrink, Holger Kalisch, Andrei Vescan, Joachim Mayer, Michael Heuken, Alwin Daus, Max C. Lemme   +15 more
wiley   +1 more source

CMOS compatible probabilistic computing hardware with cointegrated reconfigurable p-bits and synapse arrays. [PDF]

Nat Commun
Park JY, Lee JH, Lee JM, Park KN, Kim S, Han JK.   +5 more
europepmc   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

Robust overlapping covert communication against partialband interference via chaotic multi-tone spread spectrum. [PDF]

Sci Rep
Guo S, Liu D, Fu Y.
europepmc   +1 more source

Drift Reduction in 2D PtSe2 Piezoresistive Pressure Sensors Through an On‐Chip Wheatstone Bridge

Advanced Electronic Materials, EarlyView.
Drift is a major source of error affecting the accuracy and repeatability of sensors. A Wheatstone bridge (WSB) enables high sensitivity, accuracy, and the elimination of common‐mode drift. We apply the WSB concept to highly sensitive piezoresistive pressure sensors made with two‐dimensional layered platinum diselenide transducers.
Ragini Gupta, Sebastian Lukas, Nico Rademacher, Michael Gross, Nikolas Dominik, Georg S. Duesberg, Max C. Lemme   +6 more
wiley   +1 more source

State and Fault Estimation for Uncertain Complex Networks Using Binary Encoding Schemes Under Switching Couplings and Deception Attacks. [PDF]

Sensors (Basel)
Hou N, Chang M, Gao H, Hu Z, Bu X.
europepmc   +1 more source

Import Wheat Tenders and the Effects of the Russian Invasion

Agribusiness, EarlyView.
ABSTRACT Risk and volatility for many commodities escalated sharply following the Russian invasion of Ukraine, creating numerous uncertainties for trading firms and importers. The purpose of this study is to analyze the bidding behavior in Egyptian wheat import tenders in the pre‐ and post‐invasion periods.
William W. Wilson, Sumadhur Shakya, Isaac Dubovoy   +2 more
wiley   +1 more source

From spacecraft ranging to massive DNA data storage: Composite ranging codes as indices and error correction references. [PDF]

Sci Adv
Zhang Y, Qin R, Ge Q, Guo Q, Chen W.
europepmc   +1 more source