Results 121 to 130 of about 88,774 (301)

The Hierarchical Structure of Sheep Wool and Its Impact on Physical Properties

open access: yesAdvanced Functional Materials, EarlyView.
Sheep wool, a prevalent α‐keratinous fiber, is an essential model for studying protein‐based fibers. Its genetic diversity across breeds enables the establishment of multiscale structure‐property relationships, uncovering previously elusive insights into wool's hierarchical structure.
Serafina R. France Tribe   +9 more
wiley   +1 more source

Unlocking the Full Potential of MgAgSb by Unravelling the Interrelation of Phase Constitution and Thermoelectric Properties

open access: yesAdvanced Functional Materials, EarlyView.
Persistent secondary phases govern the performance of many thermoelectric materials, particularly of high performance MgAgSb. In this study advanced microstructural characterization for unequivocal phase identification combined with transport modeling and statistical analysis enabled the quantification of each phase's impact, revealing the most ...
Amandine Duparchy   +3 more
wiley   +1 more source

Enhanced Switching Performance in Single‐Crystalline PbTiO3 Ferroelectric Memristors for Replicating Synaptic Plasticity

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li   +7 more
wiley   +1 more source

Higher‐Order Temporal Dynamics in Complementary Charge Trap Memristor for High‐Dimensional Reservoir Computing

open access: yesAdvanced Functional Materials, EarlyView.
A complementary charge‐trap memristor (CoCTM) featuring a unique current transient with tunable overshoot‐relaxation dynamics is introduced for high‐resolution reservoir computing. By leveraging higher‐order temporal dynamics from engineered trapping layers, the device generates multiple output states from a single input, forming rich, high‐dimensional
Alba Martinez   +9 more
wiley   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

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