Results 81 to 90 of about 92,069 (306)

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Research progress of error correction coding in optical wireless communication system

物联网学报, 2022
The channel environment of the optical wireless communication is complicated, susceptible to various natural phenomena such as rain, snow, and fog.The channel code is usually used to correct the error caused by the channel noise.Common channel codes are ...
Jingyuan LIANG, Mengru LI, Jiafan WANG, Xizheng KE   +3 more
doaj  

Bit error rate calculation for nonlinear interferencecancellation

Electronics Letters, 1999
A novel iterative technique for calculating bit error probabilities for direct-sequence code-division multiple-access (DS-CDMA) systems with hard decision successive interference cancellation is proposed. The technique is simple to implement, and gives results close to those obtained by simulations.
P. Frenger, P. Orten, T. Ottosson
openaire   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Signed Optical Quadrature Spatial Modulation in Free Space Optical Communication

Guangtongxin yanjiu
【Objective】Aiming at the problems of low spectral efficiency and limited system throughput in Optical Quadrature Spatial Modulation (OQSM), a Signed Optical Quadrature Spatial Modulation (SOQSM) scheme is proposed in Free Space Optical Communication ...
ZHAO Hui, LIU Liang, HAN Lili, QIN Yulin, LI Junnan   +4 more
doaj  

Enhanced Switching Performance in Single‐Crystalline PbTiO3 Ferroelectric Memristors for Replicating Synaptic Plasticity

Advanced Functional Materials, EarlyView.
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li, Zhiqiang Liao, Risa Kataoka, Md Sarker Shamim, Takeshi Kijima, Hiroyasu Yamahara, Hitoshi Tabata, Munetoshi Seki   +7 more
wiley   +1 more source

Response time to a sentence verification task as a function of LPC narrow-band processing and bit error rate [PDF]

, 1987
A. chmidt-Nielsen, Howard J. Kallman
openalex   +1 more source

Positive‐Tone Nanolithography of Antimony Trisulfide with Femtosecond Laser Wet‐Etching

Advanced Functional Materials, EarlyView.
A butyldithiocarbamic acid (BDCA) etchant is used to fabricate various micro‐ and nanoscale structures on amorphous antimony trisulfide (a‐Sb2S3) thin film via femtosecond laser etching. Numerical analysis and experimental results elucidate the patterning mechanism on gold (reflective) and quartz (transmissive) substrates.
Abhrodeep Dey, Uwe Hübner, Albane Benardais, Xiaofei Wu, Andrea Dellith, Jan Dellith, Torsten Wieduwilt, Henrik Schneidewind, Markus A Schmidt, Virginie Nazabal, Volker Deckert, Jer‐Shing Huang, Wei Wang   +12 more
wiley   +1 more source

Understanding Decoherence of the Boron Vacancy Center in Hexagonal Boron Nitride

Advanced Functional Materials, EarlyView.
State‐of‐the‐art computations unravel the intricate decoherence dynamics of the boron vacancy center in hexagonal boron nitride across magnetic fields from 0 to 3 T. Five distinct regimes emerge, dominated by nuclear spin interactions, revealing optimal coherence times of 1–20 µs in the 180–350 mT range for isotopically pure samples.
András Tárkányi, Viktor Ivády
wiley   +1 more source