Results 211 to 220 of about 62,771 (309)

Temporal Interference Stimulation Enhances Neural Regeneration

open access: yesAdvanced Science, EarlyView.
Temporal interference (TI) stimulation is proposed as a non‐invasive approach to enhance neural regeneration in the deep brain. Theta‐band TI modulation selectively promotes neural progenitor cell differentiation in vitro and augments hippocampal neurogenesis in amouse model of Alzheimer's disease‐like amyloidosis.
Sofia Peressotti   +15 more
wiley   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

open access: yesAdvanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen   +9 more
wiley   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

open access: yesAdvanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo   +12 more
wiley   +1 more source

Stat Bite: Kidney and Renal Pelvis Cancer Rates [PDF]

open access: yesJNCI Journal of the National Cancer Institute, 1998
openaire   +1 more source

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

open access: yesAdvanced Science, EarlyView.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang   +7 more
wiley   +1 more source

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