Results 81 to 90 of about 55,616 (267)

Black hole solutions in Chern-Simons AdS supergravity [PDF]

open access: yesJournal of High Energy Physics, 2014
Nous étudions les solutions de trous noirs AdS chargés en supergravité Chern-Simons à cinq dimensions. Le supergroupe minimal contenant de telles configurations AdS5 × U(1) est le groupe superunitaire SU(2, 2| $$ \mathcal{N} $$ ). Pour ce modèle, nous trouvons des solutions analytiques de trous noirs qui asymptotent localement l'espace-temps AdS5 à la ...
Gastón Giribet   +3 more
openaire   +11 more sources

Cryo‐EM of Rationally Designed Photosystem I Nanoassembly on Graphene Validates Orientation‐Driven Enhancement of Photocatalytic Performance

open access: yesAdvanced Functional Materials, EarlyView.
The first cryo‐EM visualization and quantification of oriented Photosystem I (PSI) on single‐layer graphene is reported. Domain‐specific covalent anchoring of PSI, with the reducing side of the biophotocatalyst toward graphene, promotes three‐fold higher anodic photocurrent generation compared to a randomly physisorbed counterpart. This approach allows
Miriam Izzo   +6 more
wiley   +1 more source

Black holes surrounded by massive vector fields in Kaluza–Klein gravity

open access: yesEuropean Physical Journal C: Particles and Fields
We present an exact black hole solution surrounded by massive vector fields predicted by Kaluza–Klein (KK) gravity. KK gravity in four dimensions (4D) is of particular interest, as it predicts a tower of particle states, including gravitons with spin-0 ...
Kimet Jusufi   +4 more
doaj   +1 more source

Band Alignment in In‐Oxo Metal Porphyrin SURMOF Heterojunctions

open access: yesAdvanced Functional Materials, EarlyView.
Porphyrin core metalation in indium‑oxo SURMOFs enables systematic tuning of band edge positions without altering the crystal structure. First‑principles calculations reveal type‑I and type‑II heterostructures as well as multi‑junction energy cascades, establishing a modular strategy for exciton funneling and charge separation in optoelectronic ...
Puja Singhvi, Nina Vankova, Thomas Heine
wiley   +1 more source

D-dimensional Bardeen–AdS black holes in Einstein–Gauss–Bonnet theory

open access: yesEuropean Physical Journal C: Particles and Fields, 2019
We present a D-dimensional Bardeen like Anti-de Sitter (AdS) black hole solution in Einstein–Gauss–Bonnet (EGB) gravity, viz., Bardeen–EGB–AdS black holes.
Arun Kumar   +2 more
doaj   +1 more source

Photoswitching Conduction in Framework Materials

open access: yesAdvanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez   +4 more
wiley   +1 more source

Charged AdS black holes in presence of string cloud and Cardy-Verlinde formula

open access: yesNuclear Physics B
In this study, charged AdS black holes with a string cloud are taken into consideration. We identify three distinct black hole solutions within a specific temperature range, which subsequently merge into a single black hole beyond this range in the case ...
Rishi Pokhrel, Tanay K. Dey
doaj   +1 more source

A note on electromagnetic and gravitational perturbations of the Bardeen de Sitter black hole: quasinormal modes and greybody factors

open access: yesEuropean Physical Journal C: Particles and Fields, 2019
Bardeen de-Sitter (BdS) black hole is a spherically symmetric solution of Einstein’s equation which is coupled to nonlinear electromagnetic field in a way that one gets a regular solution, devoid of any singularity at the origin.
Sahel Dey, Sayan Chakrabarti
doaj   +1 more source

Black hole solutions in 2+1 dimensions [PDF]

open access: yesPhysical Review D, 1995
8 pages, RevTeX (to appear in Phys. Rev.
openaire   +3 more sources

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang   +19 more
wiley   +1 more source

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