Results 171 to 180 of about 171,021 (301)

Moisture Harvesting by the Structure Regulation of Hygroscopic Hydrogel for Energy and Water Sustainability

open access: yesAdvanced Electronic Materials, EarlyView.
Hygroscopic hydrogels are capable of utilizing the moisture from air, which can transfer the gaseous water to liquid by a surface phase transition. Taking advantage of this water, sustainable water production, thermal management, and electricity generation can be realized.
Yujie Du   +5 more
wiley   +1 more source

Observation of 1/f 4 Noise in Organic Bilayer Ambipolar FETs and Proposition of Defect Engineering Method for Ultimate Noise Control

open access: yesAdvanced Electronic Materials, EarlyView.
The low‐frequency noise in organic bilayer ambipolar transistors is investigated, revealing a unique 1/f⁴ noise from correlated trapping/detrapping and generation/recombination processes. Inserting a thin parylene layer between the n/p junction effectively reduces this excess noise, suggesting a practical approach to enhanced device reliability in ...
Youngmin Han   +4 more
wiley   +1 more source

Are PM6:Y6 Bulk Heterojunction Photoactive Films Cytocompatible and Electrically Stable in Biological Environments?

open access: yesAdvanced Electronic Materials, EarlyView.
PM6:Y6 organic photovoltaic films are systematically studied to understand their potential for use in bioelectronics. The films exhibit excellent stability in simulated physiological environments, enabling consistent power delivery and demonstrating compatibility with rat neurons and the choriallantoic membrane of chicken embryos.
Mathias Polz   +10 more
wiley   +1 more source

Moving Mesh Methods for Problems with Blow-Up

open access: green, 1996
Chris Budd   +2 more
openalex   +2 more sources

Fabrication and Characterization of Ga2O3 FinFETs on Patterned Silicon Substrate

open access: yesAdvanced Electronic Materials, EarlyView.
This study presents a Ga2O3‐based FinFET fabricated on a patterned silicon substrate using ALD. Electrical measurements reveal that post‐deposition annealing at 450 °C significantly improves the device performance, yielding a high Ion/Ioff ratio of 8.3 × 107, enhanced mobility of 8.5 cm2 V−1 s, and a breakdown voltage exceeding 200 V.
Hadi Ebrahimi‐Darkhaneh   +4 more
wiley   +1 more source

Home - About - Disclaimer - Privacy