Results 251 to 260 of about 141,674 (295)

Compact Model for Tunnel Diode Body Contact SOI n-MOSFETs

IEEE Transactions on Electron Devices, 2019
A compact model for tunnel diode body contact (TDBC) silicon-on-insulator (SOI) n-MOSFETs was developed in this paper. The compact model is implemented in Verilog-A to simulate the dc and radio frequency (RF) performance of a TDBC SOI MOSFET. The TDBC SOI MOSFETs are successfully fabricated and are used to measure important transistor electrical ...
Yongwei Chang, Jiexin Luo, Jing Chen, Lingda Xu, Zhan Chai, Shuo Wang, Yemin Dong, Xi Wang   +7 more
openaire   +1 more source

Gate-Controlled Reverse Recovery for Characterization of LDMOS Body Diode

IEEE Electron Device Letters, 2014
Reverse recovery behavior is a useful tool for monitoring lifetime variations in the body diode of power MOSFETs. However, correct interpretation of the laterally diffused MOSFET (LDMOS) reverse recovery is challenging and requires special attention. This is due to the fact that the stored charges in the LDMOS drift region can flow from two different ...
Arash Elhami Khorasani, Mark Griswold, T. L. Alford   +2 more
openaire   +1 more source

A PMOS-diode Differential Body-driven Offset compensated 0.5V

20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), 2007
This paper reports a new 0.5 V supply resolution CMOS comparator suitable for biosensor applications. The comparator uses a body-driven PMOS-diode differential pair and compensates for differential body-input referred offset-voltage through single-ended sampled-data pre-amplification.
openaire   +1 more source

Optimization of power MOSFET body diode for speed and ruggedness

IEEE Transactions on Industry Applications, 1990
The built-in diode in the power MOSFET can be used as an integral flyback diode in a power electronics circuit. However, if the power MOSFET is not optimized for utilization of the built-in diode, it can catastrophically fail during the diode mode of operation. A failure mechanism is proposed and discussed. It is found that through improved design with
H. Yilmaz, K. Owyang, P.O. Shafer, C.C. Borman   +3 more
openaire   +1 more source

Robustness of MOSFET devices under hard commutation ofthe body diode

2013 15th European Conference on Power Electronics and Applications (EPE), 2013
This paper presents a study of the behavior of power MOSFET devices under hard commutation of the body diode as well as improvements of that behavior shown by latest technology developments based on detailed simulations of the device. Hard commutation of the body diode can represent a challenging mode of operation in regards to the ruggedness of power ...
R. Siemieniec, O. Blank, M. Hutzler, L. J. Yip, J. Sanchez   +4 more
openaire   +1 more source

Modelling, analysis, and experimental study of SiC JFET body diode

The European Physical Journal Applied Physics, 2010
Within Silicon Carbide Junction Field Effect Transistor (SiC-JFET) model, body diode is not extensively studied and almost under-researched. Body diode remains a complex device to study particularly during switching transients. In this paper, the JFET body diode is experimentally demonstrated to be a power. PiN diode.
Ben Salah, Tarek, Lahbib, Y., Morel, Hervé   +2 more
openaire   +2 more sources

In vivo dosimetry with silicon diodes in total body irradiation

Radiation Physics and Chemistry, 2014
Abstract The aim of this work is the characterization and application of silicon diode detectors for in vivo dosimetry in total body irradiation (TBI) treatments. It was evaluated the diode response with temperature, dose rate, gantry angulations and field size. A maximum response variation of 2.2% was obtained for temperature dependence.
F.F. Oliveira, L.L. Amaral, A.M. Costa, T.G. Netto   +3 more
openaire   +1 more source

Utilization of SiC MOSFET Body Diode in Hard Switching Applications

Materials Science Forum, 2014
This work discusses the possibility of using SiC MOSFET body diode in switching power conversion applications, focusing on performance and reliability aspects.
Alexander Bolotnikov, John Glaser, Jeff Nasadoski, Peter Losee, Steven Klopman, Alfred Permuy, Ljubisa Stevanovic   +6 more
openaire   +1 more source

The influence of body effect and threshold voltage reduction on trench MOSFET body diode characteristics

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's, 2004
This paper presents a comprehensive study of the body diode characteristics of high-channel density trench power MOSFETs using analytic modeling, 2-dimensional numerical simulation, and physical measurements. The results show that, for state-of-the-art trench MOSFETs, the body diode characteristics are strongly influenced by majority carriers in the ...
null Dolny, null Sapp, null Elbanhaway, null Wheatley   +3 more
openaire   +1 more source

Body Diode Reverse Recovery Effects on SiC MOSFET Half-Bridge Converters

2020 IEEE Energy Conversion Congress and Exposition (ECCE), 2020
The aim of this paper is to evaluate the impact of SiC MOSFET body diode reverse recovery on device switching speed limits. Half-bridge converter leg, composed of 1200V, 130A SiC MOSFETs in HIP 247-4L package, has been analyzed in this study and experimental tests have been conducted, evaluating the electrical stresses to which the power devices are ...
Mario Pulvirenti, Angelo G. Sciacca, Luciano Salvo, Massimo Nania, Giacomo Scelba, Giuseppe Scarcella   +5 more
openaire   +1 more source