Results 221 to 230 of about 1,297,535 (280)

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

open access: yesAdvanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini   +9 more
wiley   +1 more source

Green‐Synthesized Bi‐Doped PEI N‐GQDs Enabling Long‐Term Stable Silicon Heterojunction Photodetectors

open access: yesAdvanced Electronic Materials, EarlyView.
Green‐engineered BiNPs&PEI N‐GQDs enable dual‐emission p‐Si Schottky photodetectors with strong photoresponse, long‐term stability, and a simple scalable fabrication strategy, offering a promising route for sustainable optoelectronic and photosensing applications.
Zeynep Berktaş   +6 more
wiley   +1 more source

Coexistence of Large Nernst Effect and Axis‐Dependent Conduction Polarity in Semimetal MoSi2

open access: yesAdvanced Electronic Materials, EarlyView.
MoSi2${\rm MoSi}_2$ is a rare material in which axis‐dependent conduction polarity (ADCP) and a large ordinary Nernst effect (ONE) coexist. The pronounced ONE (199μVK−1$199\,\umu \mathrm {V}\,\mathrm {K}^{-1}$) originates from nearly perfect carrier compensation, high mobility, and likely phonon drag, while ADCP arises from mixed‐dimensionality of the ...
Orest Pavlosiuk, Maciej J. Winiarski
wiley   +1 more source

A Lattice Boltzmann Thermal Model for Predicting Melt Pool Geometry in Selective Laser Melting of AlSi10Mg and 316L Stainless Steel. [PDF]

open access: yesMaterials (Basel)
Guzmán-Nogales R   +6 more
europepmc   +1 more source

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