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Biotin grafting on boron-doped diamond

Chemical Communications, 2003
Grafting of biotin on top of a polycrystalline boron-doped diamond layer was achieved by surface oxidation followed by an esterification reaction and revealed by fluorescently labelled streptavidin.
Delabouglise, Didier   +7 more
openaire   +3 more sources

Transparent Boron-Doped Carbon Nanotube Films

Nano Letters, 2008
We report results of studies on the sheet resistance and optical transmission of thin films of boron-doped single-walled carbon nanotubes (SWNTs). Boron doping was carried out by exposure of SWNTs to B 2O 3 and NH 3 at 900 degrees C and 1-3 atom % boron was found in the SWNT bundles via electron energy loss spectroscopy (EELS).
X M, Liu   +4 more
openaire   +2 more sources

Boron-doped diamond electrochemical biosensors

Clinica Chimica Acta
Biomarkers are essential tools for identifying and monitoring disease throughout pathogenesis, diagnosis, treatment and recovery. Advanced technology, such as electrochemical biosensors, have emerged as powerful tools as sensitive, selective and cost-efficient tools to identify biomarkers.
Rafa Radithya, Swara   +7 more
openaire   +2 more sources

Boron-doped manganese dioxide for supercapacitors

Chem. Commun., 2014
The addition of boron as a dopant during the reaction between carbon fiber and permanganate led to significant enhancement of the growth-rate and formation of the porous framework. The doped MnO2 was superior to the pristine sample as electrode materials for supercapacitors in terms of the specific capacitance and rate capability.
Hong Zhong, Chi   +3 more
openaire   +2 more sources

Magnetic properties of boron-doped silicon

Physical Review B, 1985
Measurements of the susceptibility between 1.25 and 300 K and of the magnetization from 0 to 50 kG are reported for a series of boron-doped silicon samples spanning the metal-nonmetal transition. As for Si:P, the magnetic properties change gradually in this field and temperature range as the boron concentration is varied across the transition.
, Sarachik, , He, , Li, , Levy, , Brooks
openaire   +2 more sources

Schottky emitter using boron-doped diamond

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2004
In this article, a microboron-doped diamond Schottky emitter for microelectron sources is presented. We fabricated an emitter tip on the top of the cantilever-type heating element using selective diamond deposition and silicon molding techniques. The fabricated diamond emitter shows high brightness emission current of 800 nA at a tip-anode (screen ...
JOON HYUNG BAE   +3 more
openaire   +1 more source

Superior Field Emissions from Boron-Doped Nanocrystalline Diamond Compared to Boron-Doped Microcrystalline Diamond

Journal of Nanoscience and Nanotechnology, 2012
Boron-doped microcrystalline diamond (BMD) and nanocrystalline diamond (BND) thin films were grown on Si substrates by microwave-assisted chemical vapor deposition, and their field emission properties were evaluated. BND exhibited a lower turn-on field and higher field enhancement factor than BMD.
Ee Le, Shim   +5 more
openaire   +2 more sources

Boron-doped graphene and boron-doped diamond electrodes: detection of biomarkers and resistance to fouling

The Analyst, 2013
Doped carbon materials are of high interest as doping can change their properties. Here we wish to contrast the electrochemical behaviour of two carbon allotropes - sp(3) hybridized carbon as diamond and sp(2) hybridized carbon as graphene - doped by boron.
Shu Min, Tan   +3 more
openaire   +2 more sources

Resistivity of boron doped diamond

physica status solidi (RRL) – Rapid Research Letters, 2009
AbstractIn this Letter, we present a significant advance in boron‐doped diamond material synthesis, with film resistivities reduced by almost two orders of magnitude with respect to the reference data of the field for boron concentrations in the range from 1 × 1018 to 3 × 1019 cm–3.
J. Barjon   +5 more
openaire   +1 more source

Superconductivity in Boron-doped SiC

Journal of the Physical Society of Japan, 2007
We report superconductivity in heavily boron-doped bulk silicon carbide related to the diamond structure. The compound exhibits zero resistivity and diamagnetic susceptibility below a critical temperature T c of ∼1.4 K, and an effective boron doping concentration higher than 10 21 cm -3 .
Zhi-An Ren   +5 more
openaire   +1 more source

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