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Boron-Doped Molecules for Optoelectronics

Trends in Chemistry, 2019
Boron-containing π-conjugated systems are an emerging class of materials for important energy-conversion applications. Because of its electron-deficient nature, embedding boron atoms into an organic material introduces electron-accepting centers that impart unique optoelectronic functions and greatly enhance performance in energy-conversion devices ...
Soren K. Mellerup, Suning Wang
openaire   +1 more source

Ferrihydrite modification by boron doping

Hyperfine Interactions, 2003
Modification of ferrihydrite nanoparticles with boron is investigated using Mossbauer spectroscopy and powdered X-ray diffraction. These materials were heated to temperatures up to 600°C. The addition of the boron in the fabrication of ferrihydrite nanoparticles raises the transition temperature of the phase transformation of ferrihydrite to hematite ...
John G. Stevens   +2 more
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Conductivity in boron-doped diamond

Physical Review B, 2001
The appearance of additional states of an impurity under high doping levels is discussed. On the basis of a Fermi level calculation, a model for the conductivity of heavily boron-doped diamond is proposed. This model allows one to reproduce the temperature dependence of the conductivity and of the Hall coefficient for different impurity concentrations.
Rinat F. Mamin, Takashi Inushima
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Superconductivity in boron-doped diamond

Diamond and Related Materials, 2005
Here we report the experimental study of a new superconductor, B-doped diamond. Subjecting a mixture of amorphous boron with graphite to a high-temperature and high-pressure treatment, we synthesized polycrystalline boron-doped diamond samples, whose sizes were suitable for specific heat measurements.
V.A. Sidorov   +9 more
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Boron-doped silicon nano-wires

Materials Science and Engineering: B, 2007
Abstract The boron-doped silicon nano-wires (B-SiNWs) were fabricated by chemical vapor deposition (CVD) and Al 2 O 3 template process at a low temperature (620 °C). It is found that the peaks in Raman scattering and photoluminescence spectra shift after boron-doping, indicating that the crystalline degree of B-SiNWs was slightly varied compared ...
Jun Jie Niu   +2 more
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Low temperature boron doped diamond

Applied Physics Letters, 2013
Low temperature boron doped diamond (LT-BDD) film deposited under 600 °C (460 °C minimum) has been reported. Study reveals that the deposition temperature and boron dopant cause nanocrystalline diamond (NCD) instead of ultrananocrystalline diamond (UNCD®).
Hongjun Zeng   +3 more
openaire   +1 more source

Compressibility of boron-doped diamond

High Pressure Research, 2006
The isothermal bulk modulus K T strongly depends on chemical bonds and the structure of solids. It can be calculated though experimentally measurable parameters (P, V and T) and, thus, can be used as a quantitative characteristic establishing (describing) relations between the structure and atomic forces from one side, and the physical properties of ...
N. Dubrovinskaia   +5 more
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pH sensing using boron doped diamond electrodes

Physical Chemistry Chemical Physics, 2011
The boron doped diamond (BDD) electrode is presented as an appropriate candidate for next generation glass-free, highly stable and accurate pH sensors. The method used in this study is based on the potential change related to the hydrogen evolution reaction following a current step, which is pH dependent.
Stéphane, Fierro   +3 more
openaire   +2 more sources

Porous Boron-Doped Diamond/Carbon Nanotube Electrodes

ACS Applied Materials & Interfaces, 2014
Nanostructuring boron-doped diamond (BDD) films increases their sensitivity and performance when used as electrodes in electrochemical environments. We have developed a method to produce such nanostructured, porous electrodes by depositing BDD thin film onto a densely packed "forest" of vertically aligned multiwalled carbon nanotubes (CNTs).
Zanin, H.   +6 more
openaire   +3 more sources

Electrochemical Behavior of Fluorinated Boron-Doped Diamond

Electrochemical and Solid-State Letters, 2003
The surface properties and the electrochem. behavior of a fluorinated B-doped diamond (F-BDD) electrode prepd. by plasma treatment in CF4-He mixt. was studied by XPS and cyclic voltammetry in acidic media. The results showed C-F bonding (C-CF and C-F) on the surface of F-BDD, which made the surface more hydrophobic.
G. SINE   +3 more
openaire   +2 more sources

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