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Boron doping using compound source
Thin Solid Films, 1990Abstract Boron doping has been realized in silicon molecular beam epitaxy using HBO 2 or B 2 O 3 sources with the usual Knudsen cell. Carrier concentration could be controlled from 5×10 15 cm −3 to 3×10 20 cm −3 by changing the crucible temperature.
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MRS Proceedings, 1991
ABSTRACTWe have investigated p-type doping of Si and SiGc layers in M BE by using two different boron sources. One is a SiB alloy which is prepared in situ by melting elemental boron into Si. Typical B concentrations in the source material are a few percent. Doping levels within 1×1018 cm−3 and 5.5×1019 cm−3 can be adjusted within the temperature range
K. Eberl +4 more
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ABSTRACTWe have investigated p-type doping of Si and SiGc layers in M BE by using two different boron sources. One is a SiB alloy which is prepared in situ by melting elemental boron into Si. Typical B concentrations in the source material are a few percent. Doping levels within 1×1018 cm−3 and 5.5×1019 cm−3 can be adjusted within the temperature range
K. Eberl +4 more
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Boron doping of graphene–pushing the limit
Nanoscale, 2016Boron-doped derivatives of graphene have been intensely investigated because of their electronic and catalytic properties. The maximum experimentally observed concentration of boron atoms in graphite was 2.35% at 2350 K. By employing quantum chemistry coupled with molecular dynamics, we identified the theoretical doping limit for single-layer graphene ...
Vitaly V, Chaban, Oleg V, Prezhdo
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Fabricating Boron-Doped Nanowires
Fusion Science and Technology, 2023K. Dale +12 more
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Fabrication of Boron-Doped CVD Diamond Microelectrodes
Analytical Chemistry, 1998Diamond microelectrodes are fabricated using microwave plasma CVD for the growth of electrically conducting single microcrystallite diamonds as well as diamond films on etched tungsten wires which are subsequently sealed in glass. The electroactive diamond is exposed by either mechanical polishing or by chemical etching of the glass.
J B, Cooper +4 more
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Multifunctional Boron‐Doped Diamond Colloidal AFM Probes
Small, 2019AbstractScanning probe microscopy techniques providing information on conductivity, chemical fluxes, and interfacial reactivity synchronized with topographical information have gained importance within the last decades. Herein, a novel colloidal atomic force microscopy (AFM) probe is presented using a spherical boron‐doped diamond (BDD) electrode ...
Sven Daboss +3 more
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Vertically Aligned Nanowires from Boron-Doped Diamond
Nano Letters, 2008Vertically aligned diamond nanowires with controlled geometrical properties like length and distance between wires were fabricated by use of nanodiamond particles as a hard mask and by use of reactive ion etching. The surface structure, electronic properties, and electrochemical functionalization of diamond nanowires were characterized by atomic force ...
Nianjun, Yang +3 more
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Boron-Doped Diamond Electrodes for Electroorganic Chemistry
2011Boron-doped diamond (BDD) electrodes provide an unusually wide electrochemical window in protic media, since there exist large offset potentials for the evolution of molecular hydrogen and oxygen, respectively. At the anode, alcohols are specifically converted to alkoxyl radicals. These can be used for chemical synthesis.
Siegfried R, Waldvogel +2 more
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