Results 21 to 30 of about 29,187 (218)

Local boron doping quantification in homoepitaxial diamond structures [PDF]

, 2010
The capability of transmission electronmicroscopy (TEM) using the high angle annular dark fieldmode (HAADF,also labelled Z-contrast) to quantify boron concentration, in the high doping range between 1019cm−3 and 1021cm−3, is demonstrated.
A.J. García, Abe, Anstis, Araújo, Bangert, D. Araújo, E. Bustarret, F. Jomard, Hytch, Ishizuka, Kirkland, Kirkland, Klein, Klie, Klie, Kohn, M.P. Alegre, M.P. Villar, Nellist, Nellist, P. Achatz, Pizarro, R. El Bouayadi, Sarigiannidou, Shiojiri, Shiojiri, Williams   +26 more
core   +4 more sources

Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers [PDF]

, 2010
A homoepitaxial boron-doped diamond single layer is investigated by means of Fourier transformed infrared spectroscopy (FTIR) and cathodoluminescence (CL). Both techniques are shown to be complementary.
Araujo, Araujo, Araújo, Barjon, Baron, Bernard, Bernard, Bonard, C. Fernández-Lorenzo, Chevallier, Collins, D. Araújo, E. Bustarret, F. Omnès, Goss, J. Martín, J. Navas, Kasu, Kawarada, M.P. Alegre, M.P. Villar, Muret, P.N. Volpe, R. Alcántara, Teukam, Thonke   +25 more
core   +4 more sources

Electron-Phonon Coupling in Boron-Doped Diamond Superconductor

, 2004
The electronic structure, lattice dynamics, and electron-phonon coupling of the boron-doped diamond are investigated using the density functional supercell method.
H. J. Xiang, J. G. Hou, Jinlong Yang, L. Nordheim, M. L. Cohen, Qingshi Zhu, Zhenyu Li   +6 more
core   +1 more source

Nanometric diamond delta doping with boron [PDF]

, 2016
Diamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity.
Bogdanov, S, Butler, JE, Chernov, V, Davidov, A, Demidov, E, Drozdov, M, Gorbachev, A, Hicks, M-L, Isaev, V, Jackman, RB, Lobaev, M, Meshi, L, Muchnikov, A, Pakpour-Tabrizi, AC, Radischev, D, Shashkin, V, Surovegina, E, Tan, H, Vikharev, A   +18 more
core   +1 more source

Structure Investigations of Islands with Atomic-Scale Boron–Carbon Bilayers in Heavily Boron-Doped Diamond Single Crystal: Origin of Stepwise Tensile Stress

Nanoscale Research Letters, 2021
The detailed studies of the surface structure of synthetic boron-doped diamond single crystals using both conventional X-ray and synchrotron nano- and microbeam diffraction, as well as atomic force microscopy and micro-Raman spectroscopy, were carried ...
S. N. Polyakov, V. N. Denisov, V. V. Denisov, S. I. Zholudev, A. A. Lomov, V. A. Moskalenko, S. P. Molchanov, S. Yu. Martyushov, S. A. Terentiev, V. D. Blank   +9 more
doaj   +1 more source

Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature

, 2004
Diamond has always been adored as a jewel. Even more fascinating is its outstanding physical properties; it is the hardest material known in the world with the highest thermal conductivity. Meanwhile, when we turn to its electrical properties, diamond is
Hatano, T., Kawarada, H., Kobayashi, K., Nagao, M., Sakaguchi, I., Tachiki, M., Takano, Y., Umezawa, H.   +7 more
core   +1 more source

Electronic structures of B-2p and C-2p of boron-doped diamond film by soft X-ray absorption and emission spectroscopy

, 2004
X-ray absorption (XAS) and emission (XES) spectroscopy near B-K and C-K edges have been performed on metallic (~1at%B, B-diamond) and semiconducting (~0.1at%B and N, BN-diamond) doped-diamond films.
Daisuke Saito, Eiki Kabasawa, H. Adachi, Hideo Isshiki, J.J. Jia, Jin Nakamura, Nobuyoshi Yamada, P. Skytt, Rupert C. C. Perera, Shigemi Yugo, Yasuaki Einaga   +10 more
core   +1 more source

The Dependence of Boron Concentration in Diamond Electrode for Ciprofloxacin Electrochemical Sensor Application

Indonesian Journal of Chemistry, 2023
This study investigates the effects of boron concentration on boron-doped diamond (BDD) electrodes for electrochemical sensors of ciprofloxacin. The effects of boron concentration, scan rate, and pH of BDD electrodes with boron concentrations of 0.1, 0.5,
Ilmi Nur Indriani Savitri, Prastika Krisma Jiwanti, Ilmanda Zalzabhila Danistya Putri, Irkham Irkham, Yasuaki Einaga, Ganden Supriyanto, Yew Hoong Wong, Sachin Kumar Srivastava, Che Azurahanim Che Abdullah   +8 more
doaj   +1 more source

Diamond anvil cell using boron-doped diamond electrodes covered with undoped diamond insulating layer

, 2018
Diamond anvil cell using boron-doped metallic diamond electrodes covered with undoped diamond insulating layer have been developed for electrical transport measurements under high pressure. These designed diamonds were grown on a bottom diamond anvil via
Adachi, Shintaro, Hara, Hiroshi, Irifune, Tetsuo, Matsumoto, Ryo, Takano, Yoshihiko, Takeya, Hiroyuki, Yamashita, Aichi   +6 more
core   +1 more source

Critical boron-doping levels for generation of dislocations in synthetic diamond [PDF]

, 2014
Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported.
A. Fiori, D. Araújo, E. Bustarret, F. Jomard, F. Lloret, G. Chicot, J. C. Pinero, Landolt-Börnsteim, M. P. Alegre, M. P. Villar, P. Achatz, Repetto L., Stoneham M.   +12 more
core   +5 more sources