Results 41 to 50 of about 29,187 (218)

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

Advanced Electronic Materials, 2023
Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the ...
Xiaohua Zhu, Siwu Shao, Siyi Chan, Juping Tu, Kosuke Ota, Yabo Huang, Kang An, Liangxian Chen, Junjun Wei, Jinlong Liu, Chengming Li, Hiroshi Kawarada   +11 more
doaj   +1 more source

Voltammetric determination of the critical micellar concentration of surfactants by using a boron doped diamond anode [PDF]

, 2010
The electrochemistry of three surfactants has been studied by voltammetry at boron doped diamond (BDD) electrode in sodium sulphate solutions. The electrochemical behaviour of these surfactants is characterized by an oxidation signal (peak or wave ...
Groenen Serrano, Karine, Racaud, Charlotte, Savall, André   +2 more
core   +2 more sources

Bio‐Inspired Molecular Events in Poly(Ionic Liquids)

Advanced Functional Materials, EarlyView.
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley   +1 more source

Doped Diamond: A Compact Review on a New, Versatile Electrode Material

International Journal of Electrochemical Science, 2007
The present paper gives an overview on the current development status of doped-diamond electrodes for electrochemical applications. It starts with a short discussion on the different types of diamond electrodes and their preparation methods.
Alexander Kraft
doaj   +2 more sources

Observation of conduction electron spin resonance in boron doped diamond [PDF]

, 2013
We observe the electron spin resonance of conduction electrons in boron doped (6400 ppm) superconducting diamond (Tc =3.8 K). We clearly identify the benchmarks of conduction electron spin resonance (CESR): the nearly temperature independent ESR signal ...
Bäuerle, Christopher, Forró, László, Fábián, Gábor, Koltai, János, Mandal, Soumen, Náfrádi, Bálint, Pichler, Thomas, Simon, Ferenc, Szirmai, Péter, Williams, Oliver A.   +9 more
core   +4 more sources

Unraveling Quantitative Sensing Mechanism and Predictive Molecular Metrics for High‐Performance OFET Amine Sensors

Advanced Functional Materials, EarlyView.
This study introduces a novel chloro boron subphthalocyanine/polymer blend OFET sensor achieving 0.005 ppb limit of detection for ammonia at room temperature and high selectivity against similar amines. An original theoretical framework is proposed to describe the sensing mechanism, relating analyte molecular volume and Lewis basicity to sensor ...
Kavinraaj Ella Elangovan, Matthew P. Confer, Rui Zhang, Siqing Wang, Jeffrey S. Moore, Rohit Bhargava, Ying Diao   +6 more
wiley   +1 more source

Next-Generation Diamond Electrodes for Neurochemical Sensing: Challenges and Opportunities

Micromachines, 2021
Carbon-based electrodes combined with fast-scan cyclic voltammetry (FSCV) enable neurochemical sensing with high spatiotemporal resolution and sensitivity.
Erin K. Purcell, Michael F. Becker, Yue Guo, Seth A. Hara, Kip A. Ludwig, Collin J. McKinney, Elizabeth M. Monroe, Robert Rechenberg, Cory A. Rusinek, Akash Saxena, James R. Siegenthaler, Caryl E. Sortwell, Cort H. Thompson, James K. Trevathan, Suzanne Witt, Wen Li   +15 more
doaj   +1 more source

Superconducting and Normal State Properties of Heavily Hole-Doped Diamond

, 2004
We report measurements of the specific heat, Hall effect, upper critical field and resistivity on bulk, B-doped diamond prepared by reacting amorphous B and graphite under high-pressure/high-temperature conditions. These experiments establish unambiguous
E. A. Ekimov, E. Bustarret, E. D. Bauer, J. D. Thompson, M. L. Cohen, R. A. Hein, S. M. Stishov, V. A. Sidorov   +7 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Recent progress of diamond device toward power application [PDF]

, 2012
International audienceThe state of the art of the Institut Néel research activity in the field of diamond power devices will be described and discussed.
Bustarret, Etienne, Chicot, Gauthier, Eon, David, Fiori, Alexandre, Gheeraert, Etienne, Muret, Pierre, Omnès, Franck, Pernot, Julien, Tran Thi, Thu Nhi, Traoré, Aboulaye, Volpe, Pierre-Nicolas   +10 more
core   +1 more source