Study on C-N coupling reactions and catalytic mechanisms of modified boron nitride for urea synthesis: from nitrogen and carbon monoxide. [PDF]
Li S, Zhang Y, Wu T, Han M.
europepmc +1 more source
Fire‐Safe Polymeric Insulation Foams for Energy‐Efficient and Low‐Carbon Buildings
This review systematically summarizes recent advances in fire‐safe polymeric insulation foams, emphasizing the balance among flame retardancy, thermal insulation, mechanical reliability, and long‐term durability. By linking material‐level thermophysical properties with building cooling‐energy demand and operational carbon emissions, it establishes a ...
Qinhe Guo +10 more
wiley +1 more source
Polydopamine-Modified Boron Nitride Reinforced Silicone Gel Composites with Enhanced Thermal Conductivity and Electrical Insulation Performance. [PDF]
Feng M +6 more
europepmc +1 more source
Physics‐driven advances in optical nanobiosensors for rapid, miniaturized, and point‐of‐care diagnostics for next‐generation decentralized and personalized healthcare based on sensor intelligence. ABSTRACT Public health emergencies and the escalating burden of chronic diseases necessitate a paradigm shift from centralized laboratory testing to rapid ...
Vishal Chaudhary +5 more
wiley +1 more source
Assessing van der Waals Corrections in the Description of Water Adsorption and Diffusion on Graphene and Hexagonal Boron Nitride. [PDF]
Grison TG +6 more
europepmc +1 more source
The underlying interface physics and engineering strategies across key POI material systems, including LiNbO3/Si, LiNbO3/SiC, LiNbO3/diamond, and AlN/diamond, were reviewed. The key engineering strategies such as atomic‐scale bonding optimization, nanostructuring, ultrathin phonon‐bridge interlayers, and ferroelectric domain wall engineering for ...
Yunjia Bao +6 more
wiley +1 more source
Wafer-Scale Self-Limiting Epitaxy of Bernal-Stacked Single-Crystal Boron Nitride. [PDF]
Wang J +22 more
europepmc +1 more source
Reconfigurable Logic Operation of MoTe2 Homojunction Enabled by Staggered Double‐Sided Contacts
A gap adjacent to an electrode in the MoTe2 SDC transistor enables polarity reconfiguration, switching between p‐type and n‐type depending on bias polarity. This reconfiguration is ensured when the absolute bias voltage is less than the gate voltage, yielding a near‐ideal subthreshold swing of 67.6 mV/dec and on/off ratios of 104–106.
Jun‐Qiang Zhang +7 more
wiley +1 more source
Design of Highly Sensitive NO<sub>2</sub> Gas Sensors Based on Boron Nitride and Aluminum Nitride Two-Dimensional Materials: A DFT-Based Study. [PDF]
Al-Seady MA +3 more
europepmc +1 more source

