Results 31 to 40 of about 16,654 (265)

Study on synthesis of polycrystalline cubic boron nitride from hexagonal boron nitride by direct phase transition

open access: yesJin'gangshi yu moliao moju gongcheng, 2021
Polycrystalline cubic boron nitride was synthesized by direct phase transition at 9~15 GPa and 1 500~2 100 ℃ using hexagonal boron nitride as initial material.
WANG Yongkai   +6 more
doaj  

Porous Ultralow-κ sp<sup>2</sup>-Bonded Boron Nitride Thin Films as Copper Diffusion Barriers. [PDF]

open access: yesAdv Sci (Weinh)
Porous sp2‐bonded boron nitride (p‐BN) thin films with an ultralow dielectric constant (κ = 1.77) are directly grown on Si substrates via RF magnetron sputtering. The films feature uniform nanopores (1.85 nm), high mechanical stability, hydrophobicity, and excellent Cu diffusion barrier performance even at 3 nm thickness, offering a promising solution ...
Liu C   +11 more
europepmc   +2 more sources

Effect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers [PDF]

open access: yesApplied Physics Letters, 2012
Effect of electric field on the band structures of graphene/boron nitride (BN) and BN/BN bilayers is investigated within the framework of density functional theory. The calculated bandgap of the graphene/BN bilayer increases, although by small amount, with applied electric field.
Radhakrishnan Balu   +3 more
openaire   +1 more source

Molecular Dynamics Simulation on Mechanical and Piezoelectric Properties of Boron Nitride Honeycomb Structures

open access: yesNanomaterials, 2019
Boron nitride honeycomb structure is a new three-dimensional material similar to carbon honeycomb, which has attracted a great deal of attention due to its special structure and properties.
Lu Xie   +4 more
doaj   +1 more source

Boron nitride microsphere/epoxy composites with enhanced thermal conductivity

open access: yesHigh Voltage, 2017
As modern electronics are developed towards miniaturisation, high-degree integration and intelligentisation, a large amount of heat will be generated during the operation of devices.
Jiajia Sun   +9 more
doaj   +1 more source

Nested boron nitride and carbon-boron nitride nanocones

open access: yesMicro & Nano Letters, 2007
In this letter we extend previously established results for nested carbon nanocones to both nested boron nitride and carbon-boron nitride nanocones. Based purely on mechanical principles and classical mathematical modelling techniques, we determine the energetically favourable structures for nested boron nitride and carbon-boron nitride nanocones ...
Baowan, D., Hill, James M
openaire   +3 more sources

A Multi‐Scale Machine Learning Framework for the Inverse Design of High Entropy Alloys

open access: yesAdvanced Engineering Materials, EarlyView.
High‐entropy alloys offer vast potential for various applications, including electrocatalysis; however, their compositional complexity challenges conventional screening. We introduce an inverse‐design framework combining two neural networks to determine optimal compositions and reconstruct nanoparticle geometry from targeted properties and conventional
Mikael Takoutsin   +14 more
wiley   +1 more source

A comparative study on the effect of reinforcing boron nitride/alumina in epoxy-based hybrid composite with Millettia pinnata leaf powder and glass sheets: Experimental fabrication, mechanical and micro-structural characterization

open access: yesHybrid Advances, 2023
The present study focuses on the fabrication and characterization of an innovative epoxy-based hybrid composite, designed to enhance its mechanical properties by incorporating three distinct reinforcing agents that are Millettia pinnata leaf powder ...
Md Mathenulla Shariff   +5 more
doaj   +1 more source

Bioapplications of Boron Nitride Nanotubes

open access: yesNanomedicine, 2015
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Genchi, Giada Graziana, CIOFANI, GIANNI
openaire   +3 more sources

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

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