Results 81 to 90 of about 15,123 (265)

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Versatile electrification of two-dimensional nanomaterials in water

Nature Communications, 2019
The origins of the different charging processes observed in graphene and boron-nitride nanofluidics are still under debate. Here, using ab-initio molecular dynamics, the authors show that hydroxide species in water exhibits physisorption on graphene but ...
Benoît Grosjean, Marie-Laure Bocquet, Rodolphe Vuilleumier   +2 more
doaj   +1 more source

In Situ Amine Formation to Modulate MOF‐Derived PdIn N‐Doped Carbon Catalysts

Advanced Materials, EarlyView.
An amine‐assisted approach converts PdIn‐MOF into PdIn intermetallic nanoparticles embedded in N‐doped carbon. In situ‐generated amines trigger early Pd nucleation, producing smaller PdIn domains than direct pyrolysis. Amine sterics and basicity tune composition and particle size, while solvent and amine co‐determine textural features.
Gonzalo Egea, Jordan Santiago Martinez, M. Asunción Molina, Jaime Mazarío, Lucy Costley‐Wood, Christian Cerezo‐Navarrete, Carlo Marini, Eduardo Villalobos‐Portillo, Andrew M. Beale, Pascual Oña‐Burgos   +9 more
wiley   +1 more source

Research progress on borides growth based on atomic layer deposition technique

Gongneng cailiao yu qijian xuebao
Borides, represented by boron oxide and boron nitride, have garnered extensive applications and in-depth research across various fields with the continuous advancement of semiconductor technology.
Pengyu CHEN, Xintao WEN, Zhichen HU, Bin XI   +3 more
doaj   +1 more source

C16 Phase High Entropy Borides With High Magnetic Anisotropy

Advanced Materials, EarlyView.
Rare‐earth‐free C16‐phase high entropy boride thin films exhibit enhanced magnetic anisotropy with coercivities surpassing their binary and ternary counterparts. Combinatorial synthesis of (Fe‐Co‐Ni‐Mn)2B films combined with density functional theory enables mapping of the magnetic properties across the composition space, revealing high entropy ...
Willie B. Beeson, Dhritiman Bhattacharya, Dinesh Bista, Bradley J. Fugetta, Gen Yin, Kai Liu   +5 more
wiley   +1 more source

Modification of boron nitride nanocages by titanium doping results unexpectedly in exohedral complexes

Nature Communications, 2019
Although isolated experimentally, the molecular structures of metal-containing boron nitride cages are still unknown. Here the authors show via DFT calculations that externally bound complexes of boron nitride fullerenes doped with a single titanium atom
Ruyi Li, Yang Wang
doaj   +1 more source

Work Function Characterization of Potassium-Intercalated, Boron Nitride Doped Graphitic Petals

Frontiers in Mechanical Engineering, 2017
This paper reports on characterization techniques for electron emission from potassium-intercalated boron nitride-modified graphitic petals (GPs). Carbon-based materials offer potentially good performance in electron emission applications owing to high ...
Patrick T. McCarthy, Patrick T. McCarthy, Rajib Paul, Dmitry Zemlyanov, Ronald G. Reifenberger, Ronald G. Reifenberger, Timothy S. Fisher, Timothy S. Fisher   +7 more
doaj   +1 more source

Machine Learning–Assisted Bio‐Interfacial Engineering Resolves Structural–Functional Conflicts in Nanocomposites

Advanced Materials, EarlyView.
A machine learning‐guided bio‐interfacial design strategy resolves the long‐standing strength–toughness–functionality trade‐off in nanocomposites. By efficiently mapping high‐performance regions in the composition–processing space, the approach delivers hierarchically entangled, nanosheet‐pinned architectures that combine mechanical robustness ...
Hao Wang, Xianfeng Chen, Peiyao Yan, Siqi Liu, Biaobiao Yan, Junhua Kong, Siew Lang Teo, Kai Jin, Jie Zhang, Ping Koy Lam, Chaobin He   +10 more
wiley   +1 more source

Signatures of Edge States in Antiferromagnetic Van der Waals Josephson Junctions

Advanced Materials, EarlyView.
ABSTRACT The combination of superconductivity and magnetic textures leads to unconventional superconducting phenomena, including new correlated and topological phases. Van der Waals (vdW) materials emerge as a versatile platform for exploring the interplay between these two competing orders.
Celia González‐Sánchez, Ignacio Sardinero, Jorge Cuadra, Alfredo Spuri, José A. Moreno, Hermann Suderow, Elke Scheer, Pablo Burset, Angelo Di Bernardo, Rubén Seoane Souto, Eduardo J. H. Lee   +10 more
wiley   +1 more source

Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS2 Field Effect Transistors

Advanced Materials, EarlyView.
Enhancement‐mode monolayer MoS2 FETs with low threshold voltage are essential for low‐power electronics. The threshold voltage can be tuned by the gate metal work function when the semiconductor/dielectric interface is clean. Interfaces between monolayer MoS2 and ZrO2 or hBN allow effective work‐function modulation of the threshold voltage, in contrast
Lixin Liu, Han Yan, Leyi Loh, Kamal Kumar Paul, Soumya Sarkar, Deepnarayan Biswas, Tien‐Lin Lee, Takashi Taniguchi, Kenji Watanabe, Manish Chhowalla, Yan Wang   +10 more
wiley   +1 more source